{"id":29095,"date":"2009-10-01T16:53:22","date_gmt":"2009-10-01T16:53:22","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/3d-soi-nmosfet-simulation-using-victory-device\/"},"modified":"2026-10-16T09:05:36","modified_gmt":"2026-10-16T16:05:36","slug":"3d-soi-nmosfet-simulation-using-victory-device","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/3d-soi-nmosfet-simulation-using-victory-device\/","title":{"rendered":"3D SOI NMOSFET Simulation Using VICTORY DEVICE"},"content":{"rendered":"<h1>3D SOI NMOSFET Simulation Using VICTORY DEVICE<\/h1>\n<h3 style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\"><strong>Abstract<\/strong><\/h3>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">SOI MOSFETs can exhibit a kink in their I<sub>d<\/sub>\/V<sub>d<\/sub>\u00a0curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to supply the device with a body contact. With a body contact, however, the geometry of the device becomes fully three dimensional. In this paper, we show how an SOI MOSFET with a body contact can be simulated in VICTORY DEVICE. 3D visualizations from the VICTORY DEVICE results illustrate how the body contact acts to suppress the kink effect.<\/p>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\"><strong>Motivation<\/strong><\/p>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">Silicon-on-Insulator (SOI) technology continues to see application in state-of-the-art CMOS designs, because of the performance advantages it offers compared to devices on a silicon substrate. These advantages include higher switching speed, lower power consumption, smaller size, resistance to latch-up, reduced temperature sensitivity and lower substrate noise. On the other hand, SOI devices may experience history effects, greater self heating, and the possibility of improper circuit operation due to parasitic bipolar currents [1,2].<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3.jpg 782w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_Q4_2009_a3.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>SOI MOSFETs can exhibit a kink in their Id\/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to supply the device with a body contact. With a body contact, however, the geometry of the device becomes fully three dimensional. In this paper, we show how an SOI MOSFET with a body contact can be simulated in VICTORY DEVICE. 3D visualizations from the VICTORY DEVICE results illustrate how the body contact acts to suppress the kink effect.<\/p>\n","protected":false},"author":5,"featured_media":19616,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29095","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>3D SOI NMOSFET Simulation Using VICTORY DEVICE - Silvaco<\/title>\n<meta name=\"description\" content=\"SOI MOSFETs can exhibit a kink in their Id\/Vd curves, which is caused by impact ionization, floating potentials, and other effects.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/3d-soi-nmosfet-simulation-using-victory-device\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"3D SOI NMOSFET Simulation Using VICTORY DEVICE\" \/>\n<meta property=\"og:description\" content=\"SOI MOSFETs can exhibit a kink in their Id\/Vd curves, which is caused by impact ionization, floating potentials, and other effects.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/3d-soi-nmosfet-simulation-using-victory-device\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2009-10-01T16:53:22+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-16T16:05:36+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a3.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/3d-soi-nmosfet-simulation-using-victory-device\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/3d-soi-nmosfet-simulation-using-victory-device\\\/\"},\"author\":{\"name\":\"Ingrid Schwarz\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\"},\"headline\":\"3D SOI NMOSFET Simulation Using VICTORY DEVICE\",\"datePublished\":\"2009-10-01T16:53:22+00:00\",\"dateModified\":\"2026-10-16T16:05:36+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/3d-soi-nmosfet-simulation-using-victory-device\\\/\"},\"wordCount\":179,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/3d-soi-nmosfet-simulation-using-victory-device\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q4_2009_a3.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ja\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/3d-soi-nmosfet-simulation-using-victory-device\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/3d-soi-nmosfet-simulation-using-victory-device\\\/\",\"name\":\"3D SOI NMOSFET Simulation Using VICTORY DEVICE - 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