{"id":29064,"date":"2011-01-01T16:27:47","date_gmt":"2011-01-01T16:27:47","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/the-doping-effect-simulation-on-the-oled-devices-using-atlas\/"},"modified":"2021-07-08T18:22:06","modified_gmt":"2021-07-09T01:22:06","slug":"the-doping-effect-simulation-on-the-oled-devices-using-atlas","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/the-doping-effect-simulation-on-the-oled-devices-using-atlas\/","title":{"rendered":"The Doping Effect Simulation on the OLED Devices Using ATLAS"},"content":{"rendered":"
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The Doping Effect Simulation on the OLED Devices Using ATLAS<\/h1>\n

Introduction<\/strong><\/p>\n

Organic light emitting diodes (OLEDs) have attracted great attention for full-color flat-panel displays since the demonstration of efficient electroluminescent devices [1]. Due to electrical doping of the electron and hole transport layer with an intrinsic emission layer sandwiched in bewteen OLED, the devices have reached high performance and high luminance at low voltage.<\/p>\n

In this article, we show the doping effect of the 2 layer NPB and Alq3 with C545T as the dopant using the 2 Dimensional Device Simulator ATLAS [2]. The electrical characteristics as the I-V curve\u00a0 and the local free carrier densities and ionized trapped charge densities were considered in this article using ATLAS. The Cole-Cole impedance [3] plot of the powerful method on characterizing many of the electrical properties of materials show the effective to doping effects.<\/p>\n<\/div><\/section><\/div>

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