{"id":29045,"date":"2011-09-01T17:12:20","date_gmt":"2011-09-01T17:12:20","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/using-victory-process-to-model-thermal-oxidation-of-silicon-in-o2-hcl-mixtures\/"},"modified":"2021-07-08T18:21:35","modified_gmt":"2021-07-09T01:21:35","slug":"using-victory-process-to-model-thermal-oxidation-of-silicon-in-o2-hcl-mixtures","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-thermal-oxidation-of-silicon-in-o2-hcl-mixtures\/","title":{"rendered":"Using VICTORY Process to Model Thermal Oxidation of Silicon in O2\/HCl Mixtures"},"content":{"rendered":"<div id='template_overview'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-0  el_before_av_section  avia-builder-el-first   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><main  role=\"main\" itemprop=\"mainContentOfPage\"  class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-29045'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_three_fourth  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-1  el_before_av_one_fourth  avia-builder-el-first  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h1 style=\"color: #000000; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">Using VICTORY Process to Model Thermal Oxidation of Silicon in O<sub>2<\/sub>\/HCl Mixtures<\/h1>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\"><strong>Introduction<\/strong><\/p>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">The addition of a chlorine species during thermal oxidation of silicon results in improved threshold stability, higher and more uniform oxide dielectric strength and improved junction properties due to lower leakage [1-3]. The effect of HCl addition is to increase the oxidation rate relative to the oxidation rate in dry oxidation ambient (O2), whilst no influence of HCL on the oxidation rate is seen for wet oxidation ambient (H<sub>2<\/sub>0). The observed increase in oxidation rate is due to:<\/p>\n<ul style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">\n<li>Water generation within the dry oxidation ambient from the reaction of O<sub>2<\/sub>\u00a0and HCl<br \/>\n4HCl + O<sub>2<\/sub>\u00a0? 2H<sub>2<\/sub>O + 2Cl<sub>2<\/sub><br \/>\nwhich increases the solubility of oxidant in the oxide<\/li>\n<li>A straining of the SiO<sub>2<\/sub>\u00a0lattice induced by the presence of chlorine [4].<\/li>\n<\/ul>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">This paper demonstrates the ability of VICTORY Process to accurately model the effect of chlorine addition to the dry oxidation ambient. The 3D process simulation software VICTORY Process uses the same physical model as the one implemented in ATHENA (2D process simulation software). The model is briefly outlined and simulation results are compared with experimental analysis [4] and the good agreement is demonstrated.<\/p>\n<\/div><\/section><\/div><div class='av-flex-placeholder'><\/div><div class=\"flex_column av_one_fourth  flex_column_table_cell av-equal-height-column av-align-top av-zero-column-padding   avia-builder-el-3  el_after_av_three_fourth  avia-builder-el-last  \" style='border-radius:0px; ' id=\"whitepaper\" ><p><div  class='avia-builder-widget-area clearfix  avia-builder-el-4  el_before_av_image  avia-builder-el-first '><div id=\"nav_menu-29\" class=\"widget clearfix widget_nav_menu\"><div class=\"menu-simulation-standard-side-menu-japanese-container\"><ul id=\"menu-simulation-standard-side-menu-japanese\" class=\"menu\"><li id=\"menu-item-26253\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-26253\"><a href=\"https:\/\/silvaco.com\/ja\/technical-library\/simulation-standard\/\">Simulation Standard<\/a><\/li>\n<\/ul><\/div><\/div><\/div><br \/>\n<div  class='avia-image-container  av-styling-    avia-builder-el-5  el_after_av_sidebar  el_before_av_button  avia-align-center '  itemprop=\"image\" itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/ImageObject\"  ><div class='avia-image-container-inner'><div class='avia-image-overlay-wrap'><a href=\"\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q4_2011_a1.pdf\" class='avia_image' target=\"_blank\" rel=\"noopener noreferrer\"><img decoding=\"async\" width=\"232\" height=\"300\" class='wp-image-19604 avia-img-lazy-loading-not-19604 avia_image' src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1-232x300.jpg\" alt='' title='simstd_Q4_2011_a1'  itemprop=\"thumbnailUrl\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1-37x48.jpg 37w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1.jpg 782w\" sizes=\"(max-width: 232px) 100vw, 232px\" \/><\/a><\/div><\/div><\/div><br \/>\n<div  class='avia-button-wrap avia-button-center  avia-builder-el-6  el_after_av_image  avia-builder-el-last ' ><a href='\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q4_2011_a1.pdf' class='avia-button  avia-color-grey   avia-icon_select-yes-right-icon avia-size-small avia-position-center ' target=\"_blank\" rel=\"noopener noreferrer\"><span class='avia_iconbox_title' >Download Simulation Standard<\/span><span class='avia_button_icon avia_button_icon_right' aria-hidden='true' data-av_icon='\ue875' data-av_iconfont='entypo-fontello'><\/span><\/a><\/div><\/p><\/div><\/div><!--close column table wrapper. Autoclose: 1 --><\/div><\/div><\/main><!-- close content main element --><\/div><\/div><div id='av_section_2'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-7  el_after_av_section  avia-builder-el-last   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><div class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-29045'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_one_full  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-8  avia-builder-el-no-sibling  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><\/div><\/div><!--close column table wrapper. Autoclose: 1 -->\n<\/p>\n","protected":false},"excerpt":{"rendered":"<p>The addition of a chlorine species during thermal oxidation of silicon results in improved threshold stability, higher and more uniform oxide dielectric strength and improved junction properties due to lower leakage [1-3]. The effect of HCl addition is to increase the oxidation rate relative to the oxidation rate in dry oxidation ambient (O2), whilst no influence of HCL on the oxidation rate is seen for wet oxidation ambient (H20). The observed increase in oxidation rate is due to:<\/p>\n","protected":false},"author":5,"featured_media":19604,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7570],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v24.0 (Yoast SEO v24.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Using VICTORY Process to Model Thermal Oxidation of Silicon in O2\/HCl Mixtures - \u30b7\u30eb\u30d0\u30b3\u30fb\u30b8\u30e3\u30d1\u30f3 : Silvaco Japan<\/title>\n<meta name=\"description\" content=\"The addition of a chlorine species during thermal oxidation of silicon results in improved threshold stability, higher and more uniform oxide dielectric strength and improved junction properties due to lower leakage [1-3].\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/simulation-standard\/using-victory-process-to-model-thermal-oxidation-of-silicon-in-o2-hcl-mixtures\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Using VICTORY Process to Model Thermal Oxidation of Silicon in O2\/HCl Mixtures\" \/>\n<meta property=\"og:description\" content=\"The addition of a chlorine species during thermal oxidation of silicon results in improved threshold stability, higher and more uniform oxide dielectric strength and improved junction properties due to lower leakage [1-3].\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/simulation-standard\/using-victory-process-to-model-thermal-oxidation-of-silicon-in-o2-hcl-mixtures\/\" \/>\n<meta property=\"og:site_name\" content=\"\u30b7\u30eb\u30d0\u30b3\u30fb\u30b8\u30e3\u30d1\u30f3 : Silvaco Japan\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2011-09-01T17:12:20+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2021-07-09T01:21:35+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2011_a1.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"5\u5206\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/silvaco.com\/simulation-standard\/using-victory-process-to-model-thermal-oxidation-of-silicon-in-o2-hcl-mixtures\/\",\"url\":\"https:\/\/silvaco.com\/simulation-standard\/using-victory-process-to-model-thermal-oxidation-of-silicon-in-o2-hcl-mixtures\/\",\"name\":\"Using VICTORY Process to Model Thermal Oxidation of Silicon in O2\/HCl Mixtures - 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