{"id":29023,"date":"2012-04-01T18:18:36","date_gmt":"2012-04-01T18:18:36","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/current-collapse-phenomenon-in-gan-hfets-resulting-from-intentional-bulk-iron-fe-doping-and-un-intentional-interface-traps\/"},"modified":"2026-10-15T14:09:52","modified_gmt":"2026-10-15T21:09:52","slug":"current-collapse-phenomenon-in-gan-hfets-resulting-from-intentional-bulk-iron-fe-doping-and-un-intentional-interface-traps","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/current-collapse-phenomenon-in-gan-hfets-resulting-from-intentional-bulk-iron-fe-doping-and-un-intentional-interface-traps\/","title":{"rendered":"Current Collapse Phenomenon in GaN HFETs resulting from Intentional Bulk Iron (Fe) Doping and Un-intentional Interface Traps"},"content":{"rendered":"

Current Collapse Phenomenon in GaN HFETs resulting from Intentional Bulk Iron (Fe) Doping and Un-intentional Interface Traps<\/h1>\n

Introduction<\/strong><\/p>\n

The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate for semiconductor device fabrication.<\/p>\n

These properties include:<\/p>\n

    \n
  1. High saturation velocities and breakdown field strength<\/li>\n
  2. Direct bandgap, allowing fabrication of light emitting devices<\/li>\n
  3. The ability to form hetero-structures using aluminum or indium<\/li>\n
  4. Large bandgaps allowing high temperature operation<\/li>\n<\/ol>\n

    Another stand-out feature of GaN based materials are their very high levels of spontaneous and strain induced piezo-electric charge. This material feature, however, has both advantages and disadvantages.<\/p>\n

    \"\"<\/p>\n

    Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

    The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate for semiconductor device fabrication.<\/p>\n

    These properties include:<\/p>\n

    High saturation velocities and breakdown field strength
    \nDirect bandgap, allowing fabrication of light emitting devices
    \nThe ability to form hetero-structures using aluminum or indium
    \nLarge bandgaps allowing high temperature operation<\/p>\n","protected":false},"author":5,"featured_media":19760,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29023","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"\nCurrent Collapse Phenomenon in GaN HFETs resulting from Intentional Bulk Iron (Fe) Doping and Un-intentional Interface Traps - Silvaco<\/title>\n<meta name=\"description\" content=\"The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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