Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2]. During an oxidation process the geometry of a 3D structure may change significantly and the silicon\/oxide interface may pass through various crystal planes with different oxidation rates. Therefore, the orientation and type of the silicon wafer affects the resulting geometry of an oxidized structure on this wafer. This paper explains in details how VICTORY Process can be used to model this anisotropic behaviour.<\/p>\n","protected":false},"author":5,"featured_media":19586,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29013","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"\n
Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics - Silvaco<\/title>\n<meta name=\"description\" content=\"Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2].\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics\" \/>\n<meta property=\"og:description\" content=\"Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2].\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2012-10-01T15:03:33+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-16T15:52:31+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2012_a3.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/\"},\"author\":{\"name\":\"Ingrid Schwarz\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\"},\"headline\":\"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics\",\"datePublished\":\"2012-10-01T15:03:33+00:00\",\"dateModified\":\"2026-10-16T15:52:31+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/\"},\"wordCount\":144,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q4_2012_a3.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ja\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/\",\"name\":\"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics - Silvaco\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q4_2012_a3.jpg\",\"datePublished\":\"2012-10-01T15:03:33+00:00\",\"dateModified\":\"2026-10-16T15:52:31+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\"},\"description\":\"Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2].\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/#breadcrumb\"},\"inLanguage\":\"ja\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"ja\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/#primaryimage\",\"url\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q4_2012_a3.jpg\",\"contentUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q4_2012_a3.jpg\",\"width\":782,\"height\":1012},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/silvaco.com\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#website\",\"url\":\"https:\\\/\\\/silvaco.com\\\/\",\"name\":\"Silvaco\",\"description\":\"\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/silvaco.com\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"ja\"},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\",\"name\":\"Ingrid Schwarz\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"ja\",\"@id\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g\",\"url\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g\",\"contentUrl\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g\",\"caption\":\"Ingrid Schwarz\"},\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/author\\\/ingrid\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO Premium plugin. -->","yoast_head_json":{"title":"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics - Silvaco","description":"Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2].","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/","og_locale":"ja_JP","og_type":"article","og_title":"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics","og_description":"Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2].","og_url":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/","og_site_name":"Silvaco","article_publisher":"https:\/\/www.facebook.com\/SilvacoSoftware\/","article_published_time":"2012-10-01T15:03:33+00:00","article_modified_time":"2026-10-16T15:52:31+00:00","og_image":[{"width":782,"height":1012,"url":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2012_a3.jpg","type":"image\/jpeg"}],"author":"Ingrid Schwarz","twitter_card":"summary_large_image","twitter_creator":"@SilvacoSoftware","twitter_site":"@SilvacoSoftware","twitter_misc":{"\u57f7\u7b46\u8005":"Ingrid Schwarz","\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/#article","isPartOf":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/"},"author":{"name":"Ingrid Schwarz","@id":"https:\/\/silvaco.com\/#\/schema\/person\/f85f880bc8a7ce823b36a9072e1f0a29"},"headline":"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics","datePublished":"2012-10-01T15:03:33+00:00","dateModified":"2026-10-16T15:52:31+00:00","mainEntityOfPage":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/"},"wordCount":144,"image":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2012_a3.jpg","articleSection":["Simulation Standard"],"inLanguage":"ja"},{"@type":"WebPage","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/","url":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/","name":"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics - Silvaco","isPartOf":{"@id":"https:\/\/silvaco.com\/#website"},"primaryImageOfPage":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/#primaryimage"},"image":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2012_a3.jpg","datePublished":"2012-10-01T15:03:33+00:00","dateModified":"2026-10-16T15:52:31+00:00","author":{"@id":"https:\/\/silvaco.com\/#\/schema\/person\/f85f880bc8a7ce823b36a9072e1f0a29"},"description":"Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2].","breadcrumb":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/#breadcrumb"},"inLanguage":"ja","potentialAction":[{"@type":"ReadAction","target":["https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/"]}]},{"@type":"ImageObject","inLanguage":"ja","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/#primaryimage","url":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2012_a3.jpg","contentUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2012_a3.jpg","width":782,"height":1012},{"@type":"BreadcrumbList","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/using-victory-process-to-model-the-effect-of-silicon-substrate-orientation-on-oxidation-kinetics\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/silvaco.com\/"},{"@type":"ListItem","position":2,"name":"Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics"}]},{"@type":"WebSite","@id":"https:\/\/silvaco.com\/#website","url":"https:\/\/silvaco.com\/","name":"Silvaco","description":"","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/silvaco.com\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"ja"},{"@type":"Person","@id":"https:\/\/silvaco.com\/#\/schema\/person\/f85f880bc8a7ce823b36a9072e1f0a29","name":"Ingrid Schwarz","image":{"@type":"ImageObject","inLanguage":"ja","@id":"https:\/\/secure.gravatar.com\/avatar\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g","caption":"Ingrid Schwarz"},"url":"https:\/\/silvaco.com\/ja\/author\/ingrid\/"}]}},"_links":{"self":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/29013","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/users\/5"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/comments?post=29013"}],"version-history":[{"count":3,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/29013\/revisions"}],"predecessor-version":[{"id":957001,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/29013\/revisions\/957001"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/media\/19586"}],"wp:attachment":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/media?parent=29013"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/categories?post=29013"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/tags?post=29013"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}![\"\"](\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2012_a3.jpg\")
<\/p>\n