{"id":29004,"date":"2013-04-01T14:42:05","date_gmt":"2013-04-01T14:42:05","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/the-extended-gaussian-disorder-model-in-atlas\/"},"modified":"2021-07-08T18:20:14","modified_gmt":"2021-07-09T01:20:14","slug":"the-extended-gaussian-disorder-model-in-atlas","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/the-extended-gaussian-disorder-model-in-atlas\/","title":{"rendered":"The Extended Gaussian Disorder Model in Atlas"},"content":{"rendered":"
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The Extended Gaussian Disorder Model in Atlas<\/h1>\n

Preamble<\/strong><\/p>\n

In this article the various enhancements to the organic device modeling that have been implemented recently in Atlas are presented. Following the description of the carrier statistics and the new mobility and diffusion models, published data are also reproduced in the final results section.<\/p>\n

Introduction<\/strong><\/p>\n

There has been much recent interest in organic light emitting diodes, organic solar cells, and organic field-effect transistors. The organic materials these devices are based on are disordered, significantly differentiating them from crystalline semiconductors. For example charge transport is attributed to hopping between localized sites, and the energy distribution of these sites is assumed to be Gaussian. The Extended Gaussian Disorder Model (EGDM)(1,2) calculates carrier mobility and diffusion in these organic semiconductors.<\/p>\n<\/div><\/section><\/div>

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