{"id":28994,"date":"2013-07-01T15:38:40","date_gmt":"2013-07-01T15:38:40","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/hints-tips-and-solutions-july-august-september-2013\/"},"modified":"2026-10-16T08:50:58","modified_gmt":"2026-10-16T15:50:58","slug":"hints-tips-and-solutions-july-august-september-2013","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/","title":{"rendered":"Hints, Tips and Solutions – Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices"},"content":{"rendered":"

Hints, Tips and Solutions<\/h1>\n

Q. How do I Simulate Rapid Thermal Annealing Temperature Transients in Vacuum?<\/strong><\/p>\n

A<\/strong>. When a wafer is clamped only at its edges and is heated with an infra-red source in a vacuum, the majority of the heat loss occurs through black body radiation. The vacuum prevents thermal conduction mechanisms for the majority of the wafer area. It is also important to realize that if both sides of the wafer are exposed to the vacuum without contact to a conductive heat sink, both the front and back sides of the wafer will radiate heat and so black body heat radiation must be simulated from both surfaces for accurate results.<\/p>\n

In Atlas, black body radiation is simulated with an additional logical parameter, \u201cBLACKBODY\u201d added to the \u201cTHERMCONTACT\u201d statement. This allows the user to set up multiple thermally radiative boundary conditions in their structure.<\/p>\n

\"\"<\/p>\n

Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to as the direction (see Figure 1). With regard to crystallographic orientation, avalanche breakdown process in 4H-SiC uniquely features anisotropy of avalanche breakdown field, i.e., impact ionization coefficients.<\/p>\n","protected":false},"author":12,"featured_media":19667,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-28994","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"\nHints, Tips and Solutions - Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices - Silvaco<\/title>\n<meta name=\"description\" content=\"In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Hints, Tips and Solutions - Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices\" \/>\n<meta property=\"og:description\" content=\"In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2013-07-01T15:38:40+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-16T15:50:58+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q3_2013_hints.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"Hints, Tips and Solutions – Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices\",\"datePublished\":\"2013-07-01T15:38:40+00:00\",\"dateModified\":\"2026-10-16T15:50:58+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/\"},\"wordCount\":170,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q3_2013_hints.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ja\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/\",\"name\":\"Hints, Tips and Solutions - Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices - Silvaco\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q3_2013_hints.jpg\",\"datePublished\":\"2013-07-01T15:38:40+00:00\",\"dateModified\":\"2026-10-16T15:50:58+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"description\":\"In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/#breadcrumb\"},\"inLanguage\":\"ja\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"ja\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/#primaryimage\",\"url\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q3_2013_hints.jpg\",\"contentUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q3_2013_hints.jpg\",\"width\":782,\"height\":1012},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/hints-tips-and-solutions-july-august-september-2013\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/%e9%a6%96%e9%a1%b5\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Hints, Tips and Solutions – Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#website\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/\",\"name\":\"Silvaco\",\"description\":\"\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"ja\"},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\",\"name\":\"Casey Molver\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"ja\",\"@id\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"url\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"contentUrl\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"caption\":\"Casey Molver\"},\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/author\\\/caseym\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO Premium plugin. -->","yoast_head_json":{"title":"Hints, Tips and Solutions - Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices - Silvaco","description":"In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/","og_locale":"ja_JP","og_type":"article","og_title":"Hints, Tips and Solutions - Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices","og_description":"In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to","og_url":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/","og_site_name":"Silvaco","article_publisher":"https:\/\/www.facebook.com\/SilvacoSoftware\/","article_published_time":"2013-07-01T15:38:40+00:00","article_modified_time":"2026-10-16T15:50:58+00:00","og_image":[{"width":782,"height":1012,"url":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q3_2013_hints.jpg","type":"image\/jpeg"}],"author":"Casey Molver","twitter_card":"summary_large_image","twitter_creator":"@SilvacoSoftware","twitter_site":"@SilvacoSoftware","twitter_misc":{"\u57f7\u7b46\u8005":"Casey Molver","\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/#article","isPartOf":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/"},"author":{"name":"Casey Molver","@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80"},"headline":"Hints, Tips and Solutions – Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices","datePublished":"2013-07-01T15:38:40+00:00","dateModified":"2026-10-16T15:50:58+00:00","mainEntityOfPage":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/"},"wordCount":170,"image":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q3_2013_hints.jpg","articleSection":["Simulation Standard"],"inLanguage":"ja"},{"@type":"WebPage","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/","url":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/","name":"Hints, Tips and Solutions - Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices - Silvaco","isPartOf":{"@id":"https:\/\/silvaco.com\/ja\/#website"},"primaryImageOfPage":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/#primaryimage"},"image":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q3_2013_hints.jpg","datePublished":"2013-07-01T15:38:40+00:00","dateModified":"2026-10-16T15:50:58+00:00","author":{"@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80"},"description":"In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to","breadcrumb":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/#breadcrumb"},"inLanguage":"ja","potentialAction":[{"@type":"ReadAction","target":["https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/"]}]},{"@type":"ImageObject","inLanguage":"ja","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/#primaryimage","url":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q3_2013_hints.jpg","contentUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q3_2013_hints.jpg","width":782,"height":1012},{"@type":"BreadcrumbList","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/hints-tips-and-solutions-july-august-september-2013\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/silvaco.com\/zh-hans\/%e9%a6%96%e9%a1%b5\/"},{"@type":"ListItem","position":2,"name":"Hints, Tips and Solutions – Compare the Results of Breakdown Simulations with Hatakeyama\u2019s Impact Ionization Model for 4H-SiC Based Power Devices"}]},{"@type":"WebSite","@id":"https:\/\/silvaco.com\/ja\/#website","url":"https:\/\/silvaco.com\/ja\/","name":"Silvaco","description":"","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/silvaco.com\/ja\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"ja"},{"@type":"Person","@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80","name":"Casey Molver","image":{"@type":"ImageObject","inLanguage":"ja","@id":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","caption":"Casey Molver"},"url":"https:\/\/silvaco.com\/ja\/author\/caseym\/"}]}},"_links":{"self":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/28994","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/users\/12"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/comments?post=28994"}],"version-history":[{"count":3,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/28994\/revisions"}],"predecessor-version":[{"id":956997,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/28994\/revisions\/956997"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/media\/19667"}],"wp:attachment":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/media?parent=28994"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/categories?post=28994"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/tags?post=28994"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}