{"id":28875,"date":"2017-04-01T18:27:14","date_gmt":"2017-04-01T18:27:14","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/model-extraction-for-body-biased-xdmos-devices\/"},"modified":"2021-07-08T18:14:53","modified_gmt":"2021-07-09T01:14:53","slug":"model-extraction-for-body-biased-xdmos-devices","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/model-extraction-for-body-biased-xdmos-devices\/","title":{"rendered":"Model Extraction for Body-Biased XDMOS Devices"},"content":{"rendered":"<div id='template_overview'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-0  el_before_av_section  avia-builder-el-first   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><main  role=\"main\" itemprop=\"mainContentOfPage\"  class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-28875'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_three_fourth  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-1  el_before_av_one_fourth  avia-builder-el-first  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h1>Model Extraction for Body-Biased XDMOS Devices<\/h1>\n<p><strong>Introduction<\/strong><\/p>\n<p>Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced. In addition to the regular threshold voltage increase with body bias, the LDD region of the HVMOS typically also has a significant body bias dependence. Also, the VBS dependence of mobility degradation with the transversal electric field needs to be taken into account. Due to these particularities, modeling of HVMOS devices with body contact requires careful consideration of body bias dependencies. Semi-empirical compact models make use of extra model parameters in order to achieve the needed body bias dependence accuracy. In the case of physics-based compact models, such as HiSIM_HV2, the effect of body bias can be naturally and accurately considered, with very few such extra parameters.<\/p>\n<p>This paper illustrates a model extraction methodology for body-biased extended drain MOSFET (XDMOS) devices, using the standard compact HVMOS model HiSIM_HV2, Version 2.3.1. The model calculates the device currents by solving the Poisson equation of the surface potential, so the body bias effect is implicitly considered up to a reasonable degree of accuracy. In case higher accuracy is required, two extra model parameters are available: SC3, which considers the VBS dependence of the threshold voltage short-channel effect, and MUEEFB, introduced in Version 2.3.0 to account for the VBS dependence of phonon scattering.<\/p>\n<\/div><\/section><\/div><div class='av-flex-placeholder'><\/div><div class=\"flex_column av_one_fourth  flex_column_table_cell av-equal-height-column av-align-top av-zero-column-padding   avia-builder-el-3  el_after_av_three_fourth  avia-builder-el-last  \" style='border-radius:0px; ' id=\"whitepaper\" ><p><div  class='avia-builder-widget-area clearfix  avia-builder-el-4  el_before_av_image  avia-builder-el-first '><div id=\"nav_menu-29\" class=\"widget clearfix widget_nav_menu\"><div class=\"menu-simulation-standard-side-menu-japanese-container\"><ul id=\"menu-simulation-standard-side-menu-japanese\" class=\"menu\"><li id=\"menu-item-26253\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-26253\"><a href=\"https:\/\/silvaco.com\/ja\/technical-library\/simulation-standard\/\">Simulation Standard<\/a><\/li>\n<\/ul><\/div><\/div><\/div><br \/>\n<div  class='avia-image-container  av-styling-    avia-builder-el-5  el_after_av_sidebar  el_before_av_button  avia-align-center '  itemprop=\"image\" itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/ImageObject\"  ><div class='avia-image-container-inner'><div class='avia-image-overlay-wrap'><a href=\"\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q2_2017_a4.pdf\" class='avia_image' target=\"_blank\" rel=\"noopener noreferrer\"><img decoding=\"async\" width=\"232\" height=\"300\" class='wp-image-19106 avia-img-lazy-loading-not-19106 avia_image' src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1-232x300.jpg\" alt='' title='simstd_Q2_2017_a4-1'  itemprop=\"thumbnailUrl\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1-37x48.jpg 37w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1.jpg 782w\" sizes=\"(max-width: 232px) 100vw, 232px\" \/><\/a><\/div><\/div><\/div><br \/>\n<div  class='avia-button-wrap avia-button-center  avia-builder-el-6  el_after_av_image  avia-builder-el-last ' ><a href='\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q2_2017_a4.pdf' class='avia-button  avia-color-grey   avia-icon_select-yes-right-icon avia-size-small avia-position-center ' target=\"_blank\" rel=\"noopener noreferrer\"><span class='avia_iconbox_title' >Download Simulation Standard<\/span><span class='avia_button_icon avia_button_icon_right' aria-hidden='true' data-av_icon='\ue875' data-av_iconfont='entypo-fontello'><\/span><\/a><\/div><\/p><\/div><\/div><!--close column table wrapper. Autoclose: 1 --><\/div><\/div><\/main><!-- close content main element --><\/div><\/div><div id='av_section_2'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-7  el_after_av_section  avia-builder-el-last   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><div class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-28875'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_one_full  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-8  avia-builder-el-no-sibling  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><\/div><\/div><!--close column table wrapper. Autoclose: 1 -->\n<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced. In addition to the regular threshold voltage increase with body bias, the LDD region of the HVMOS typically also has a significant body bias dependence. Also, the VBS dependence of mobility degradation with the transversal electric field needs to be taken into account. Due to these particularities, modeling of HVMOS devices with body contact requires careful consideration of body bias dependencies. Semi-empirical compact models make use of extra model parameters in order to achieve the needed body bias dependence accuracy. In the case of physics-based compact models, such as HiSIM_HV2, the effect of body bias can be naturally and accurately considered, with very few such extra parameters.<\/p>\n","protected":false},"author":5,"featured_media":19106,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7570],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v24.0 (Yoast SEO v24.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Model Extraction for Body-Biased XDMOS Devices - \u30b7\u30eb\u30d0\u30b3\u30fb\u30b8\u30e3\u30d1\u30f3 : Silvaco Japan<\/title>\n<meta name=\"description\" content=\"Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/model-extraction-for-body-biased-xdmos-devices\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Model Extraction for Body-Biased XDMOS Devices\" \/>\n<meta property=\"og:description\" content=\"Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/model-extraction-for-body-biased-xdmos-devices\/\" \/>\n<meta property=\"og:site_name\" content=\"\u30b7\u30eb\u30d0\u30b3\u30fb\u30b8\u30e3\u30d1\u30f3 : Silvaco Japan\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2017-04-01T18:27:14+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2021-07-09T01:14:53+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a4-1.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"5\u5206\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/silvaco.com\/ja\/simulation-standard\/model-extraction-for-body-biased-xdmos-devices\/\",\"url\":\"https:\/\/silvaco.com\/ja\/simulation-standard\/model-extraction-for-body-biased-xdmos-devices\/\",\"name\":\"Model Extraction for Body-Biased XDMOS Devices - 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