{"id":28863,"date":"2017-10-01T00:03:55","date_gmt":"2017-10-01T00:03:55","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\/"},"modified":"2026-10-16T08:19:28","modified_gmt":"2026-10-16T15:19:28","slug":"temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\/","title":{"rendered":"Temperature Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors with a new Mobility Model"},"content":{"rendered":"

Temperature Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors with a new Mobility Model<\/h1>\n

1. Introduction<\/h3>\n

Amorphous In-Ga-Zn-O (a-IGZO), which is a typical amorphous oxide conductor (AOS), is considered to be one of the most promising channel materials of thin-film transistors (TFTs) for new flat-panel displays because of the high mobility, the small sub-threshold swing and the low off current [1].<\/p>\n

When devices with a-IGZO TFTs are developed, it is necessary to consider operation of the TFTs under various bias and temperature conditions. In many cases, it has been understood as the operation of the a-IGZO TFT is similar to that of a-Si TFT and dominated by the density of sub-gap states (DOS) with a fixed band mobility [2]. However, it is difficult to reproduce the operation because the DOS of the a-IGZO TFT near conduction band is much lower, about two orders, than that of the a-Si TFT.<\/p>\n

In this paper, we introduce a new mobility model, \u201cIGZO.TOKYO,\u201d which can reproduce temperature properties of the a-IGZO TFT [3]. Additionally, methods to extract the model parameters and DOS from the transfer curve are also shown so as to use the model easily.<\/p>\n

\"\"<\/p>\n

Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Amorphous In-Ga-Zn-O (a-IGZO), which is a typical amorphous oxide conductor (AOS), is considered to be one of the most promising channel materials of thin-film transistors (TFTs) for new flat-panel displays because of the high mobility, the small sub-threshold swing and the low off current [1].<\/p>\n","protected":false},"author":5,"featured_media":19136,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-28863","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"\nTemperature Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors with a new Mobility Model - Silvaco<\/title>\n<meta name=\"description\" content=\"Amorphous In-Ga-Zn-O (a-IGZO), which is a typical amorphous oxide conductor (AOS), is considered to be one of the most promising\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Temperature Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors with a new Mobility Model\" \/>\n<meta property=\"og:description\" content=\"Amorphous In-Ga-Zn-O (a-IGZO), which is a typical amorphous oxide conductor (AOS), is considered to be one of the most promising\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2017-10-01T00:03:55+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-16T15:19:28+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2017_a3-1.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\\\/\"},\"author\":{\"name\":\"Ingrid Schwarz\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\"},\"headline\":\"Temperature Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors with a new Mobility Model\",\"datePublished\":\"2017-10-01T00:03:55+00:00\",\"dateModified\":\"2026-10-16T15:19:28+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\\\/\"},\"wordCount\":202,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q4_2017_a3-1.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ja\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/temperature-properties-of-amorphous-in-ga-zn-o-thin-film-transistors-with-a-new-mobility-model\\\/\",\"name\":\"Temperature Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors with a new Mobility Model - 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