{"id":28835,"date":"2018-07-01T23:30:46","date_gmt":"2018-07-01T23:30:46","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/3d-topography-simulation-of-sic-epitaxial-growth-modeled-by-diffusive-flux-and-gibbs-thomson-effect\/"},"modified":"2026-10-15T14:00:08","modified_gmt":"2026-10-15T21:00:08","slug":"3d-topography-simulation-of-sic-epitaxial-growth-modeled-by-diffusive-flux-and-gibbs-thomson-effect","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/3d-topography-simulation-of-sic-epitaxial-growth-modeled-by-diffusive-flux-and-gibbs-thomson-effect\/","title":{"rendered":"3D Topography Simulation of SiC Epitaxial Growth Modeled by Diffusive Flux and Gibbs-Thomson Effect"},"content":{"rendered":"<p>&nbsp;<\/p>\n<h1>3D Topography Simulation of SiC Epitaxial Growth Modeled by Diffusive Flux and Gibbs-Thomson Effect<\/h1>\n<p>&nbsp;<\/p>\n<p><strong>1. Introduction<\/strong><\/p>\n<p>One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for Ron and BV [1]. The super-junction structure is fabricated by trench filling with the epitaxial growth [2, 3]. Regarding the SiC epitaxial growth model, a topography simulation model and its usability were presented by Mochizuki et al. in IEDM 2017 for the first time [4]. It is modeled by the diffusive flux model in the gas region and the Gibbs-Thomson (GT) effect at the surface. This epitaxial growth model can be applied to the general wide bandgap materials such as SiC, GaN or Diamond. These the wide bandgap materials have comparably large binding energies and it is necessary to use AP (Atmosphere Pressure) CVD or HP (High Pressure) CVD and high temperature [5, 6]. We implemented this epitaxy model in 3D process simulator: Victory Process. This article describes overview of the model and demonstrates simulation results in the IEDM 2017 paper.<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_a1_Q3-2018.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_a1_Q3-2018.jpg 782w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_a1_Q3-2018-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_a1_Q3-2018-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_a1_Q3-2018-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_a1_Q3-2018-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_a1_Q3-2018-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_a1_Q3-2018-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_Q3-2018_a1.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for Ron and BV [1]. The super-junction structure is fabricated by trench filling with the epitaxial growth [2, 3].<\/p>\n","protected":false},"author":12,"featured_media":19289,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-28835","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>3D Topography Simulation of SiC Epitaxial Growth Modeled by Diffusive Flux and Gibbs-Thomson Effect - Silvaco<\/title>\n<meta name=\"description\" content=\"One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for Ron and BV [1].\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/3d-topography-simulation-of-sic-epitaxial-growth-modeled-by-diffusive-flux-and-gibbs-thomson-effect\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"3D Topography Simulation of SiC Epitaxial Growth Modeled by Diffusive Flux and Gibbs-Thomson Effect\" \/>\n<meta property=\"og:description\" content=\"One of wide bandgap semiconductors, SiC has been widely applied to the power devices, and then, the super-junction MOS transistor of SiC is being investigated to obtain higher performance for Ron and BV [1].\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/3d-topography-simulation-of-sic-epitaxial-growth-modeled-by-diffusive-flux-and-gibbs-thomson-effect\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2018-07-01T23:30:46+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T21:00:08+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/SimSta_fig3-8.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"550\" \/>\n\t<meta property=\"og:image:height\" content=\"477\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" 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