The problem of discretising the semiconductor drift-diffusion equations in the presence of a uniform magnetic field using the Box Method has previously been addressed in the literature. For the case of a rectangular non-uniform grid in 2D see[1], and for a general triangular mesh see[2]. These methods have also been extended to 3D [3],[4]. We have implemented and analysed these methods and found them all to be flawed in some way. In this paper we describe the established discretisations and elaborate on their flaws. We then briefly describe the new discretisation developed by Silvaco, and give some examples of its use.

Solar cells manufactured from wafers of crystalline or polycrystalline silicon are today the dominant technology in the commercial market. Solar cells based on thin film semiconductor are another technology with great potential. One such technology is based on a compound of the elements copper, indium, gallium and selenium abbreviated Cu(in,Ga)Se2 or CIGS. Two advantages of this technology are the low material consumption and the high efficiency that has been demonstrated, which both make it economically competitive. The objective of this article is to simulate a CIGS Solar cell module taking into account electrical, optical and geometrical parameters in order to optimize his design.

SOI MOSFETs can exhibit a kink in their Id/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to supply the device with a body contact. With a body contact, however, the geometry of the device becomes fully three dimensional. In this paper, we show how an SOI MOSFET with a body contact can be simulated in VICTORY DEVICE. 3D visualizations from the VICTORY DEVICE results illustrate how the body contact acts to suppress the kink effect.

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to lattice mismatch or differences in thermal expansion have become more prevalent. Another is that strain has become an important tool in modifying and enhancing the electrical properties of the semiconductor materials [1]. Large strain induced gains in both electron and hole mobilities have been reported [2][3]. In this article, we will show how SILVACO tools can be used to simulate the creation of a 3D FinFET using VICTORY CELL, calculate the internal strains using VICTORY STRESS, and analyze its electrical characteristics using VICTORY DEVICE.