Learn About Advanced TFT-Based Flat Panel Design with SmartSpice
2023年3月24日
本ウェビナーでは、SmartSpice独自の4端子TFTコンパクトモデルを採用するメリットを紹介するとともに、SmartSpice Flex Modeling技術を用いた残像の問題に対するシミュレーションについて解説します。
エントリー - Gigi Boss
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations
The utilization of thin material layers is common in modern semiconductor device fabrication. Subsequent etching steps require an accurate modeling of these thin layers. Although level-set based process TCAD simulations are capable of representing flat thin material layers with sub-grid accuracy, topographical changes during etching processes expose the low underlying grid resolution, which leads to detrimental artifacts.
Learn How TCAD is a Key Enabler for Photodiode Development
2023年2月24日
本ウェビナーでは、シルバコがこれらの技術について解説し、TCADが様々な光検出器の構造と材料の組合せに対して幅広く適用されており、エンドユーザ市場に貢献していることを説明します。
Learn How SilTerra Uses Cello and Viola for Standard Cells and I/O Library Optimization and Characterization
2023年2月17日
本ウェビナーでは、さまざまなライブラリの開発、最適化、検証における課題を共有し、Cello、Viola、SmartSpiceがユニークかつダイナミックな方法でどのように貢献し、高速かつ正確な結果を実現する方法を紹介します。
How to Search, View and Use Default Parameters from the Silvaco Material DataBase SMDB with DeckBuild
Silver, DeckBuild’s material database viewer, can be used to examine the default parameters in the Silvaco Material DataBase (SMDB) and to generate MATERIAL commands for Victory Process and Victory Device. Silver can be started by clicking the launch button in DeckBuild.
Learn About the Latest Advances in Device Modeling Using Silvaco Utmost IV
2023年1月27日
本ウェビナーでは、シルバコのUtmost IVデバイス・モデリング・ツールの2022年ベースラインの機能強化の一部をご紹介します。
3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT
The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V [1]. Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance [2].
Writing an Impurity Activation Model with the Open Model Library
Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will be electrically active. To address this effect, Silvaco Victory Process models dopant activation in Silicon Carbide in 3 ways.
User Probes and Arbitrary Parameter Sweeps in Victory Device
One of the new features in Victory Device is the ability to add user managed parameters to a log file. This can be used when sweeping parameters (manually or in a Deckbuild loop), such as doping, stress, or layer thicknesses, to add the swept parameter to a log file. To do so, simply create a USER probe (with an optional name), and set the parameter USER on the MODELS statement to some value. This parameter (and value) will be added to the log file. The available user parameters are USER1, USER2, USER3, and USER4. The following shows a DeckBuild loop (go victoryd) to simulate the effect of varying STRESS_XX on the mobility.