The past several years has seen a fast deployment of wide-bandgap power devices in fast chargers, electric vehicles, data centers and renewable energy processing. The performance of power devices is fast progressing towards their intrinsic material limit. As these devices can handle higher voltage and larger current density, packaging and thermal management will become the key limiting factor for exploiting their benefits in power electronic converters and systems.

Silver, DeckBuild’s material database viewer, can be used to examine the default parameters in the Silvaco Material DataBase (SMDB) and to generate MATERIAL commands for Victory Process and Victory Device. Silver can be started by clicking the launch button in DeckBuild.

The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V [1]. Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance [2].