Very Low Energy Boron Implant Simulation Using New BCA Monte-Carlo Model

Introduction

ATHENA version 5.0 includes a new Binary Collision Algorithm (BCA) for accurate Monte-Carlo implant modeling down to sub-1keV energies. This new BCA code is a 3D model that takes account of channeling in all possible crystal directions, not just the vertical direction. Accurate modeling of all channeling directions becomes an important factor for low energy implants such as is used by the new generation of very deep submicron devices.

Typically for MOSFET applications using <100> silicon substrates and very low energy boron channel implants, in addition to channeling in the vertical direction, channeling also occurs in the <110> directions which includes a channeling direction along the surface of the crystal as shown in Figure 1