• TCAD Examples

    TCAD Examples

ganfetex03.in : AlGaN/GaN HEMT Id-Vgs and Id-Vds Characterization

Requires: Blaze
Minimum Versions: Atlas 5.32.0.R

This example demonstrates Id-Vds and Id-Vgs calculations in an AlGaN/GaN HEMT.

This example demonstrates:

  • Construction of the heterojunction structure using Atlas syntax
  • Material and models parameter specification
  • Simulation of Id/Vds and Id/Vgs characteristics
  • Display of the results in TonyPlot

The device under consideration is a simple AlGaN/GaN HEMT. The main concept here is that the polarization charge is calculated using the built-in models as specified by the polarization parameter on the model statement.

After the initial solution is obtained the gate voltage is ramped to -10 V, then the IdVg characteristic is extracted from Vg=-10 to Vg=1.0 V.

A family of drain current characteristics are then simulated with and without lattice heating taken into account by ramping the drain from 0 to 15 V at various gate voltages.

Finally, the family of curves is plotted using the TonyPlot tool.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Input Files
Output Results
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software.
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