• TCAD Examples

esdex04.in : HBM in a MOSFET with Energy Balance Models

Requires: SSuprem 4/S-Pisces/Giga
Minimum Versions: Athena 5.22.3.R, Atlas 5.28.1.R

In this example, transient simulation of Electrostatic Discharge (ESD) on an NMOS transistor using the Human Body Model (HBM) is performed. During the ESD event significant local heating is produced. The solution of local lattice temperature is included. Since this is a short channel MOSFET significant non-local effects are present. The energy balance (EB) models are also used. This example shows:

  • Formation of a MOS structure in Athena
  • Interface to Atlas
  • Selection of lattice heat flow models
  • Selection of energy balance models
  • Use of current boundary conditions and non-linear transient pulse to simulate a HBM ESD event.
  • Analysis of both the temperature distribution in the device and non-isothermal IV curve.

In most respects, except for the use of energy balance models, this example is the same as the previous example. The device structure and grid are slightly different. The parameter init spac.mult=2 is used in Athena to reduce the CPU time. For more accurate simulation spac.mult=1 would be required.

To select the energy balance models for electrons the parameter hcte.el is used. In many cases it is necessary to optimise the numerical methods used in combined lattice heating and energy balance simulations. newton is used here. However block newton is a more robust alternative for difficult cases.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Additional Info:

Input Files
Output Results
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