esdex02.in : Charge Device Model in a Diode
Requires: S-Pisces/Giga/MixedMode
Minimum Versions: Atlas 5.28.1.R
This simple example demonstrates transient Charge Device Model (CDM) ESD simulation in a simple 1D diode. It shows:
- Structure formation using Atlas syntax
- Material parameters and model set up for non-isothermal simulation
- Transient solution generated by a discharge of a 10pF capacitor through a 5nH inductor and 1 Ohm resistor connected to the diode
The input file consists of three separate runs each starting with the statement go atlas . The first one uses the Atlas syntax to construct a 1D diode structure. The mesh, regions and electrodes are specified as coordinates in the syntax. It is compulsory to use electrode names (and not just numbers) when the structure is used in MixedMode. The doping distribution for the device is constructed from gaussian and uniform analytical functions. The final structure is saved for later use.
The second run calculates the initial operating point of the circuit. The syntax for this run is split into two parts. The first part is a SPICE-like circuit description and control cards. This part is bounded by .begin and .end . The second part is device parameter syntax. The circuit netlist is written using standard SPICE syntax.
The device parameter syntax is given after the .end statement. This sets the models, material and contact parameters for the Atlas device.
The final run uses the .tran statement. Note that a time dependent resistor is used which changes value from 1.e6 Ohm to 1500 Ohm during 1ps.
The currents and voltages for each node, and the maximum lattice temperature in the device versus time, are stored in the file specified in the .log statement.
To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.
Additional Info:
Input Deck
# (c) Silvaco Inc., 2019 go atlas TITLE CDM ESD simulation for PN diode mesh space.mult=1.0 # x.mesh loc=0.00 spac=0.25 x.mesh loc=2.00 spac=0.25 # y.mesh loc=0.00 spac=0.02 y.mesh loc=0.2 spac=0.002 y.mesh loc=2 spac=0.2 region num=1 silicon electrode num=1 top name=emitter electrode num=2 bottom name=base doping uniform conc=5e16 p.type doping gauss n.type conc=1.e20 dir=y junction=0.2 peak=0 save outf=esdex02_0.str tonyplot esdex02_0.str -set esdex02_0.set go atlas .begin c1 1 0 10p l1 1 2 5nH r1 2 3 1 aesd 0=base 3=emitter width=10 infile=esdex02_0.str .nodeset v(1)=100 v(2)=0 v(3)=0 .ic v(1)=100 v(2)=0 v(3)=0 .numeric toldc=1.e-5 vchange=0.5 imaxdc=999 .options m2ln debug print .save outfile=esdex02_dc .end thermcontact num=1 device=aesd y.min=2 y.max=2 ext.temp=300 alpha=1000 models device=aesd region=1 conmob fldmob srh auger bgn lat.temp mater device=aesd region=1 taup0=1e-7 taun0=1e-7 impact device=aesd reg=1 selb go atlas .begin c1 1 0 10p l1 1 2 5nH r1 2 3 1.0e6 exp 1.0e6 1 0. 1ps 10 10 aesd 0=base 3=emitter width=10 infile=esdex02_0.str .numeric toltr=1.e-3 vchange=10. lte=0.05 dtmin=0.01ps .ic v(1)=100 v(3)=0 .options print relpot .tran 0.1ps 1000ns .load infile=esdex02_dc .log outfile=esdex02 .end thermcontact num=1 device=aesd y.min=2 y.max=2 ext.temp=300 alpha=1000 models device=aesd region=1 conmob fldmob srh auger bgn lat.temp mater device=aesd region=1 taup0=1e-7 taun0=1e-7 impact device=aesd reg=1 selb method tol.ltemp=0.01 max.temp=3000 climit=1000 go atlas tonyplot esdex02_tr.log -set esdex02_log.set tonyplot esdex02_tr.log -set esdex02_2.set quit
