• TCAD Examples

anoxex09.in : Trench Sidewall Oxidation with Orientation Dependence

Requires: SSuprem 4
Minimum Versions: Athena 5.22.3.R

This example shows that the orientation of the wafer will affect the growth rate of an oxide on trench sidewalls. The orientation od the substrate is specified by init orientation=xyz . xyz willbe 100, 110 or 111. The rotation of the substrate is specified by the parameter rot.sub

The method statement parameters GRID.OX and GRIDINIT.OX are used to improve the grid within the grown oxide layer. The thicknesses of sidewall oxide are extracted for all cases.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Input Files
Output Results
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software.
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