Simulation of diffusion enhancement due to interstitial supersaturation : Simulation of diffusion enhancement due to interstitial supersaturation

Requires: Victory Process : Core Simulator, 2D Diffusion & Implantation
Minimum Version: Victory Process 7.22.0.R

This example demonstrates implantation induced interstitial supersaturation and the application of advanced diffusion models for the simulation of transient dopant diffusion enhancement.

Moreover the junction extraction capability of Victory Process is demonstrated extensively as well as the capability to export 1D cross-sections.

List of key syntax:

Init: Defines simulation volume, meshing resolution and number of Adaptive Mesh Refinement (AMR) levels

Line: Adjusts volume data mesh (for diffusion simulation)

Deposit: Deposition with geometrical mode

Implant: Ion implantation

Diffuse: Performs dopant activation and dopant diffusion

Extract XJ: Extracts the position of the junction along a 1D cut-line

Export 1D: Exports a 1D cut-line for visualization in tonyplot

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

The following plots demonstrate:

vpex08_01.png shows the implanted boron profile and the implantation induced interstitial profile.

vpex08_02.png shows the boron, interstitial and boron-interstitial pair profiles after 1ms of annealing..

vpex08_plot0.png shows the position of the junction over time while the annealing progresses.