• TCAD Examples

    TCAD Examples

vp2dex08.in : Channeling in SiC due to change in miscut.theta


Requires: Victory Process
Minimum Version: Victory Process 7.58.2.R

The example is set up to demonstrate Aluminum channeling in 4H-SiC due to variation is substrate miscut angle, theta.

The simulation varies "sub.miscut.theta" parameter in the "init" statement to initialize a new SiC substrate with varied miscut angle and the substrate is then subjected to Aluminum implant at 65 keV and with a dose of 2.15e13 cm-2. The implant is conducted at 0 degree tilt and 0 degree substrate rotation in order to capture the impact of miscut angle only.

Values used for "sub.miscut.theta" are: 0,1, 2, and 3 degress.

Since the implant is not masked, the simulation in Victory Process remains in 1D mode.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Input Files
Output Results
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software.
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