Amorphous IGZO TFT Simulation : Amorphous IGZO TFT Simulation

Requires: Blaze/TFT
Minimum Versions: Atlas 5.28.1.R

This file performs Id/Vgs and Id/Vd simulations of a TFT device with material properties corresponding to amorphous IGZO (indium galium zinc oxide) material. The example shows:

  • Structure formation using Atlas syntax
  • Material and model settings for passivated IGZO
  • Forward Id/Vgs characteristics
  • On state Id/Vds characteristics

The key command in TFT simulation is the defect statement. It is used to define a continuous density of trap states in the silicon and the relevant trapping cross-sections.

The Id/Vgs and Id/Vd ramping is done in a similar manner to the threshold voltage tests for MOS devices described in the MOS examples. Results from this example are compared with published experimental data.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.