• TCAD Examples

    TCAD Examples

vpex12.in : Setting material properties for a simple NPN transistor

Requires: Victory Process : Core Simulator {newline} 2D Physical Etch & Deposit {newline} Minimum Versions: Victory Process 7.58.2.R

This example demonstrates how to change material properties for diffusion, activation, and oxidation processes on a simple NPN transistor flow and compares results to a flow without modificiation of the properties.

List of key syntax:

Init: Starts a simulation in process mode and defines the size of the simulation domain, the geometrical mesh resolution, the substrate properties, and doping.

Deposit: Deposits a layer of pre-doped material.

Material: Sets material properties, i.e., material model parameters for diffusion, acitvation, oxidation, etc.

Interface: Sets interface properties, i.e., interface model parameters for diffusion.

Implant: Performs implantation of dopants with Monte-Carlo implantation module.

Diffuse: Performs oxidation and annealing of dopants.

Export: Exports simulation status in Tonyplot format.

Extract3d: Extracts oxide thickness.

To load and run this example, select the Load example button in DeckBuild Example window. This will copy the input file and any support files to your current working directory. Select the Run button to execute the example.

Input Files
Output Results
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software.
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