3D Device Simulation - Effect of a Body Contact

soiex07.in : 3D Device Simulation - Effect of a Body Contact

Requires: Device 3D
Minimum Versions: Atlas 5.28.1.R

This example demonstrates Ids/Vgs and Id/Vds 3D analysis of a short channel ultra-thin SOI transistor with body contact. Such simulations cannot be performed using a 2D simulator because the body electrode is located in the out of the plane of the drain, gate and source. The example shows:

  • Formation of 3D structure using Atlas syntax
  • Id/Vgs solution with Vds=0.1V
  • Id/Vds solution with Vgs=1.5V

The formation of this 3D structure is performed using the Atlas syntax. The syntax used is very similar to that in the previous 2D example. The definition of dimensions in the third direction is defined by the z indicator. Thus z.min and z.max define extents in the z direction, just as x.min and x.max do in the x direction.

The SOI device is composed of a 0.05 micron layer of silicon on a 0.45 micron silicon dioxide substrate. The device has a 12 nm thick gate oxide and a gate length of 0.8 microns (effective channel length is 0.5 microns). The gate width is 2.5um. The body contact location is defined by the following statement

elec num=4 x.min=2.8 x.max=3.6 y.min=-0.012 y.max=0.00 z.min=3.5 z.max=4

After the device description, the model statement is used to select a set of physical models for this simulation. In this case, these models are 'consrh' and 'auger' recombination, the conmob and fldmob mobility models, Band Gap Narrowing. The impact statement is used to specify the Selberherr model. The contact statement is used to assign the work function on the polysilicon gate.

The numerical methods used are also similar to the previous example: METHOD gummel newton carr=2 . This means that if convergence is not reached in decoupled mode (gummel) the simulator will automatically switch to coupled mode (newton). In addition, a two carrier solution is performed by solving Poisson's equation for potential and the electron and hole continuity equations.

The drain voltage is set to 0.1V, and then the gate voltage is swept to 1.5V to measure the Ids/Vgs curve.

Then the gate voltage is set to 1.5V, and then the drain voltage is swept to 3V. At this point, faster solutions are obtained using the coupled newton algorithm so the simulation switches to this method. The drain voltage is then ramped to 4V.

The IV results are displayed using TonyPlot.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.