The "Kink" Effect in Partially Depleted SOI MOSFETs : The "Kink" Effect in Partially Depleted SOI MOSFETs

Requires: S-Pisces
Minimum Versions: Atlas 5.28.1.R

This example simulates the Ids/Vds characteristics of a partially depleted SOI MOSFET, described in example, for three gate voltages. The effect of impact ionisation at the drain junction causes the silicon film to be raised in potential and causes a shift in the threshold voltage. This is seen as a "kink" in the Ids/Vgs curves. The file shows:

  • Basic SOI structure definition using Atlas syntax
  • Setting transport models including impact ionization
  • Generating an Ids/Vds curve with Vgs=1V, 2V and 3V
  • Plotting output curves and structures.

The Atlas syntax and methodology is based upon that of and a description of it may be found there.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.