Laser Diode Simulation using Luttinger-Kohn k.p model : Laser Diode Simulation using Luttinger-Kohn k.p model

Requires: S-Pisces/Quantum
Minimum Versions: Atlas 5.28.1.R

The example demonstrates the use of Luttinger-Kohn k.p model to calculate the band structure and optical response of the active layer of a simple quantum well laser diode. The response is fully coupled to the drift diffusion equations during the simulation, which biases the diode into a positive gain regime.

The example illustrates the differences between the coupled k.p model with its corresponding effective mass approximation. The comparison is made between: band structure, density of states, optical gain, optical transition matrix elements, and band character

Detailed description of models and parameters used during the simulation can be found in the input deck itself.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.