SiGe p-type Resonant Tunneling Diode : SiGe p-type Resonant Tunneling Diode

Requires: S-Pisces/Quantum
Minimum Versions: Atlas 5.28.1.R

This example considers a p-type SiGe RTD with 2nm wide double Si barriers separated by a 2nm SiGe well. A two-band model is used for hole bandstructure. Band offsets and effective masses are set by DEV.HH, DEV.LH and MHH, MLH parametrs on the MATERIAL statment. The convergence criterium for the maximum change in potential is set by the QCRIT.NEGF parameter on the MODELS statement to 0.1 meV.

In order to solve for eigen energies and wavefunctions, we use NEGF.EIG paramater of the SOLVE and SAVE statement. NEGF.EIG can be switchedoff to save computation time if the information on eigen energies is not required. Use EIG.YMIN and EIG.YMAX parametrs on the models statement to choose only states localized in this region.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.