GaAs n-type Resonant Tunneling Diode : GaAs n-type Resonant Tunneling Diode

Requires: Blaze/Quantum
Minimum Versions: Atlas 5.28.1.R

This example considers n-type GaAs RTD with 2nm wide double barriers separated by a 2nm well. The sumulation is based of a self-consistent solution of Poisson and Non-Equilibrium Green's function equations. To launch the model, use N.NEGF_PL1D and/or P.NEGF_PL1D on the MODELS statement. This will solve a 1D model in one slice and copy it to all other slices. If slices are not equivalent, use N.NEGF_PL and/or P.NEGF_PL to solve a 1D model for each slice. Energy grid size in the NEGF solver is regulated by ESIZE.NEGF on the MODELS statement (default is 2001). You may increase it up to 10000 for better convergence. To set broadening in quazi-equilibrium regions, use ETA.NEGF (default is 0.0066 eV). Increase it to 0.01 eV for better convergence. Physically, the broadening corresponds to inelastic electron-phonon scattering, and is necessary to fill emitter quazi-bound states.

In order to solve for eigen energies and wavefunctions, we use the NEGF.EIG paramater of the SOLVE and SAVE statement. NEGF.EIG can be switchedoff to save computation time, if the information on eigen energies is not required. Use EIG.YMIN and EIG.YMAX parameters on the models statement to choose only states localized in this region.

To gain insight into transmission, DOS and current spectra, we use PROBE statements. Spectra files will have names quantumex18_TranvsE_1.log, quantumex18_TranvsE_2.log etc. for each time you set NEGF.LOG on the SAVE statement. Setting X-location is not needed if you solve only one slice (N.NEGF_PL1D).

Additionally, we probe total charge and resonant energies at each bias point and store them in the IV log file.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.