2D BCA low energy boron source/drain implant

aniiex17.in : 2D BCA low energy boron source/drain implant

Requires: SSuprem 4, MC IMPLANT
Minimum Versions: Athena 5.22.3.R

This two dimensional example of the Monte Carlo Binary Collision Approximation (BCA) model has two cases, the first of zero tilt, the second of thirty degree tilt. (See the Athena_IMPLANT example on "BCA Models for well channeled Boron Implant" for a description of the BCA model.)

The structure includes a thin oxide above the silicon, and polysilicon 0.15 um long (such as used for a MOS gate). In this example, the 2 keV boron implant is effectively a source/drain (or LDD) implant. (At this low energy, most analytic implant models are inaccurate.)

The zero tilt case produces nearly symmetric dopant distribution. The thirty degree tilt case shows additional dopant on the left side of the structure, including the left side of the polysilicon, and a shadowing effect on the right side, as expected.

A comparison of the zero tilt and the thirty degrees tilt will show a higher dose in the zero tilt case. This is due to a larger number of incident ions reflected in the thirty degrees tilt case.

The beamwidth parameter introduces a random tilt between zero and +/- beamwidth/2 degrees for Monte Carlo ion implant simulations. For an accurate simulation, this parameter has been set to 0.1.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.