BCA Models for well channeled Boron Implant.

aniiex14.in : BCA Models for well channeled Boron Implant.

Requires: SSuprem 4, MC IMPLANT
Minimum Versions: Athena 5.22.3.R

This example demonstrates that 0-tilt implantation can be simulated using the Binary Collision Approximation (BCA) Model. In the BCA model the deflection of the moving particles is calculated in a strict binary way - between the moving ion and the closest atom in the lattice. The difference between the BCA model and earlier implemented Monte Carlo crystalline model is much more accurate determination of the closest atom and more accurate calculation of impact dependent inelastic energy losses. Therefore, BCA is capable of much more accurately predicting trajectories of well-channeled particles and therefore usually gives much better agreement with experiments in those cases where the channeling process is dominant, e.g. for 0 degrees implants.

The simulated profile is compared with experiment (R.J. Shreutelkamp, et.al., Nucl. Instr. & Methods, v. B55, p. 615, 1991) and SVDP simulation which is also based on SIMS experiments. It should be stressed here that experimental results for well channeled implants are quite sensitive to many factors including surface conditions (thickness and uniformity of oxide surface layer) and precision of the ion beam orientation and beam width. Even 0.5 degree deviation in these parameters could result in considerable changes of measured implanted profiles. Therefore, agreement between these simulations and experiment should be considered as quite reasonable.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.