LDD Formation using High Tilt Angle Implant (LATID)

aniiex10.in : LDD Formation using High Tilt Angle Implant (LATID)

Requires: SSuprem 4
Minimum Versions: Athena 5.22.3.R

This example demonstrates the use of the analytical angled implant model. A MOS structure is created with angled full rotation LDD implants. Full rotation is used to provide symmetry of 2D profiles. LDD implant uses off-axes direction (48 degrees) to exclude very deep penetration along 45 degrees direction. A very detailed Monte Carlo simulation would be needed to obtain a reliable set of moments for 45 degree implants. Source and drain As implant is performed at 0 degrees.

Note: The parameter STD_TABLE is used in the MOMENTS statement. Otherwise the SVDP model would overestimate the implant tail because it does not have surface oxide dependence for arsenic.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.