POWER : Power Device Application Examples
- powerex01.in : Reverse Recovery of a Power Diode
- powerex02.in : Vertical DMOS Turn-on Characteristics
- powerex03.in : IGBT Transient Latch-up with Lattice Heating
- powerex04.in : IGBT Ic/Vce Characteristics
- powerex05.in : Guard Ring Breakdown Analysis
- powerex06.in : GTO Turn-off Transient
- powerex07.in : LDMOS Breakdown
- powerex08.in : LDMOS Breakdown using Ionization Integrals
- powerex09.in : Anisotropic Mobility Characteristics of a SiC T-MOSFET
- powerex10.in : Anisotropic Mobility Characteristics of a SiC DMOS Device
- powerex11.in : Vertical DMOS Gate Charging Simulation
- powerex12.in : modeling Low-Voltage Power MOSFET
- powerex13.in : Merged PiN Schottky Power Diode
- powerex14.in : CoolMOS
- powerex15.in : SEU Induced Gate Rupture (SEGR) in a Power MOSFET
- powerex16.in : 3D BiGT On-State Characteristics as a Function of the Anode Shorts Layout Design
- powerex17.in : Wide Bandgap Ga2O3 MOSFET
- powerex18.in : Buffered Super Junction LDMOS
- powerex19.in : Super-Junction "RESURF" LDMOS
- powerex20.in : 3D Vertical LOCOS power MOSFET
- powerex21.in : 3D Mixed-Mode Simulation of Current Filaments in Multicell IGBT
- powerex22.in : UMOS Device
- powerex23.in : 3D Process and Device Simulation of a Split-Gate Trench UMOSFET
- powerex24.in : Silicon Carbide (SiC) CoolMOS using Realistic Processing.
- powerex25.in : Silicon Carbide (SiC) Hybrid Junction Termination Extension (HJTE)
Additional Info:
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation
you should consider updating to a later version of the software.