powerex09.in : Anisotropic Mobility Characteristics of a SiC T-MOSFET
Requires: DevEdit/Blaze
Minimum Versions: Atlas 5.34.0.R
This example demonstrates the simulation of the forward characteristics of a trench gated MOS power transistor. Three simulations are performed to show the effect of the crystallographic plane mobility modeling on the device characteristics.
This device is created entirely within DevEdit and is composed of SiC, silicon dioxide, aluminum and polysilicon within a simulation domain of 6um x 16um. The MOSFET has been created with a gate oxide of 800A and an N-type polysilicon gate.
The device simulations consist of the ID-VD characteristics at a gate voltage of 20V. Three characteristics were then obtained for different mobility models.
First, the standard isotropic mobility model was used where the SiC mobility coefficients were defined for the <1100> plane which is the high mobility plane.
Secondly, the standard isotropic mobility model was used where the SiC mobility coefficients were defined for the <1000> plane which is the low mobility plane.
Thirdly, an anisotropic mobility model was used where the SiC mobility coefficients were defined for both the <1100> and <1000> planes .
The anisotropic model is applied by specifying a default set of mobility coefficients which apply everywhere. Then on the second mobility statement the n.angle parameter specifies the mobility at 90 degrees to the horizontal. This switches on the anisotropic mobility model.
To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.
Input Files
Input Deck
# (c) Silvaco Inc., 2022 go devedit DevEdit version=2.4.2.R work.area x1=0 y1=-0.5 x2=7 y2=17 # devedit 2.4.2.R (Wed Oct 29 20:04:11 PST 1997) # libsflm 2.0.0.R (Thu May 1 18:03:38 PDT 1997) # libDW_Misc 1.20.0.R (Mon Apr 28 17:55:25 PDT 1997) # libCardDeck 1.20.0.R (Tue Apr 29 15:01:54 PDT 1997) # libGeometry 1.20.0.R (Mon Apr 28 18:17:55 PDT 1997) # libDW_Set 1.20.0.R (Mon Apr 28 17:57:52 PDT 1997) # libSVC_Misc 1.20.0.R (Mon Apr 28 18:20:53 PDT 1997) # libSDB 1.0.6.C (Mon May 5 16:28:49 PDT 1997) # libSSS 1.20.0.R (Mon May 5 16:29:45 PDT 1997) # libMeshBuild 1.20.2.R (Wed Oct 15 20:34:28 PDT 1997) # libDW_Make 1.1.3.R (Thu May 1 20:07:31 PDT 1997) region reg=1 name=n+sub mat=4H-SiC color=0x7f00ff pattern=0x8 \ polygon="6,11 6,16 0,16 0,11" # impurity id=1 region.id=1 imp=Arsenic \ peak.value=1e+19 ref.value=1000000000000 comb.func=Multiply # constr.mesh region=1 default region reg=2 name=n-drift mat=4H-SiC color=0x7f00ff pattern=0x8 \ polygon="5,3 6,3 6,11 0,11 0,2.5 5,2.5" # impurity id=1 region.id=2 imp=Arsenic \ peak.value=1e+16 ref.value=1000000000000 comb.func=Multiply # constr.mesh region=2 default region reg=3 name=pbase mat=4H-SiC color=0x7f00ff pattern=0x8 \ polygon="5,2.5 0,2.5 0,0 1.5,0 1.5,1 5,1" # impurity id=1 region.id=3 imp=Boron \ peak.value=1e+17 ref.value=1000000000000 comb.func=Multiply # constr.mesh region=3 default max.height=0.25 region reg=4 name=n+source mat=4H-SiC color=0x7f00ff pattern=0x8 \ polygon="5,1 1.5,1 1.5,0 4,0 5,0" # impurity id=1 region.id=4 imp=Arsenic \ peak.value=1e+18 ref.value=1000000000000 comb.func=Multiply # constr.mesh region=4 default max.height=0.2 max.width=0.25 region reg=5 name=gateox mat="Silicon Oxide" color=0xff pattern=0x2 \ polygon="5.08,2.92 6,2.92 6,3 5,3 5,2.5 5,1 5,0 5.08,0" # constr.mesh region=5 default region reg=6 name=gate mat=PolySilicon elec.id=1 work.func=0 color=0xffff00 pattern=0x5 \ polygon="6,2.92 5.08,2.92 5.08,0 6,0" # constr.mesh region=6 default region reg=7 name=source mat=Aluminum elec.id=2 work.func=0 color=0xffc8c8 pattern=0x7 \ polygon="0,0 0,-0.5 4,-0.5 4,0 1.5,0" # constr.mesh region=7 default substrate name="drain" electrode=3 workfunction=0 # Set Meshing Parameters # base.mesh height=2 width=0.5 # bound.cond !apply max.slope=30 max.ratio=100 rnd.unit=0.001 line.straightening=1 align.points when=automatic # imp.refine imp="Net Doping" scale=log transition=1e+10 imp.refine min.spacing=0.02 # constr.mesh max.angle=90 max.ratio=300 max.height=1000 \ max.width=1000 min.height=0.0001 min.width=0.0001 # constr.mesh type=Semiconductor default # constr.mesh type=Insulator default # constr.mesh type=Metal default # constr.mesh type=Other default # constr.mesh region=1 default # constr.mesh region=2 default # constr.mesh region=3 default max.height=0.25 # constr.mesh region=4 default max.height=0.2 max.width=0.25 # constr.mesh region=5 default # constr.mesh region=6 default # constr.mesh region=7 default constr.mesh id=1 under.mat=PolySilicon depth=0.1 default max.height=0.02 max.width=0.2 constr.mesh id=2 x1=4.9 y1=0 x2=5 y2=3.5 default max.width=0.02 constr.mesh id=3 x1=0 y1=2 x2=5 y2=3.5 default max.height=0.1 constr.mesh id=4 x1=0 y1=10 x2=6 y2=12 default max.height=0.4 constr.mesh id=5 x1=5 y1=0 x2=5.15 y2=3.5 default max.width=0.02 Mesh Mode=MeshBuild base.mesh height=2 width=0.5 bound.cond !apply max.slope=30 max.ratio=100 rnd.unit=0.001 line.straightening=1 align.Points when=automatic struct outf=powerex09_0.str tonyplot powerex09_0.str -set powerex09_0.set go atlas TITLE : TRENCH MOSFET POWER DEVICE SIMULATION mesh infile=powerex09_0.str material material=4H-SiC permitti=9.66 eg300=2.99 \ edb=0.1 gcb=2 eab=0.2 gvb=4 \ nsrhn=3e17 nsrhp=3e17 taun0=5e-10 taup0=1e-10 \ tc.a=100 models analytic conmob fldmob srh auger fermi optr bgn print # Standard isotropic mobility in plane <1100> # mobility material=4H-SiC vsatn=2e7 vsatp=2e7 betan=2 betap=2 \ mu1n.caug=10 mu2n.caug=410 ncritn.caug=13e17 \ deltan.caug=0.6 gamman.caug=0.0 \ alphan.caug=-3 betan.caug=-3 \ mu1p.caug=20 mu2p.caug=95 ncritp.caug=1e19 \ deltap.caug=0.5 gammap.caug=0.0 \ alphap.caug=-3 betap.caug=-3 # contact name=gate n.poly # solve init solve prev method newton solve prev vfinal=20 name=gate vstep=1 save outf=powerex09_1.str method newton trap maxtrap=10 log outf=powerex09_1.log solve prev vfinal=15 vstep=2.5 name=drain output flowlines e.mobility h.mobility save outf=powerex09_2.str solve prev vfinal=60 vstep=5 name=drain go atlas TITLE : TRENCH MOSFET POWER DEVICE SIMULATION mesh infile=powerex09_0.str material material=4H-SiC permitti=9.66 eg300=2.99 \ edb=0.1 gcb=2 eab=0.2 gvb=4 \ nsrhn=3e17 nsrhp=3e17 taun0=5e-10 taup0=1e-10 \ tc.a=100 models analytic conmob fldmob srh auger fermi optr bgn print # Standard isotropic mobility in plane <1000> # mobility material=4H-SiC vsatn=2e7 vsatp=2e7 betan=2 betap=2 \ mu1n.caug=5 mu2n.caug=80 ncritn.caug=13e17 \ deltan.caug=0.6 gamman.caug=0.0 \ alphan.caug=-3 betan.caug=-3 \ mu1p.caug=2.5 mu2p.caug=20 ncritp.caug=1e19 \ deltap.caug=0.5 gammap.caug=0.0 \ alphap.caug=-3 betap.caug=-3 # contact name=gate n.poly # solve init solve prev method newton solve prev vfinal=20 name=gate vstep=1 save outf=powerex09_3.str method newton trap maxtrap=10 log outf=powerex09_2.log solve prev vfinal=15 vstep=2.5 name=drain output flowlines e.mobility h.mobility save outf=powerex09_4.str solve prev vfinal=60 vstep=5 name=drain go atlas TITLE : TRENCH MOSFET POWER DEVICE SIMULATION mesh infile=powerex09_0.str material material=4H-SiC permitti=9.66 eg300=2.99 affinity=4.2 \ edb=0.1 gcb=2 eab=0.2 gvb=4 \ nsrhn=3e17 nsrhp=3e17 taun0=5e-10 taup0=1e-10 \ tc.a=100 models analytic conmob fldmob srh auger fermi optr bgn print # Anisotropic mobility model # # First define mobility in plane <1100> # mobility material=4H-SiC vsatn=2e7 vsatp=2e7 betan=2 betap=2 \ mu1n.caug=10 mu2n.caug=410 ncritn.caug=13e17 \ deltan.caug=0.6 gamman.caug=0.0 \ alphan.caug=-3 betan.caug=-3 \ mu1p.caug=20 mu2p.caug=95 ncritp.caug=1e19 \ deltap.caug=0.5 gammap.caug=0.0 \ alphap.caug=-3 betap.caug=-3 # # Now define mobility in plane <1000> # mobility material=4H-SiC n.angle=90.0 p.angle=90.0 vsatn=2e7 vsatp=2e7 \ betan=2 betap=2 mu1n.caug=5 mu2n.caug=80 ncritn.caug=13e17 \ deltan.caug=0.6 gamman.caug=0.0 \ alphan.caug=-3 betan.caug=-3 \ mu1p.caug=2.5 mu2p.caug=20 ncritp.caug=1e19 \ deltap.caug=0.5 gammap.caug=0.0 \ alphap.caug=-3 betap.caug=-3 # contact name=gate n.poly # solve init solve prev method newton solve prev vfinal=20 name=gate vstep=1 save outf=powerex09_5.str method newton trap maxtrap=10 log outf=powerex09_3.log solve prev vfinal=15 vstep=2.5 name=drain output flowlines e.mobility h.mobility save outf=powerex09_6.str solve prev vfinal=60 vstep=5 name=drain # Now plot three Id-Vd curves to compare mobility models tonyplot -overlay powerex09_1.log powerex09_2.log powerex09_3.log -set powerex09.set quit
Output Results
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