powerex04.in : IGBT Ic/Vce Characteristics

Requires: S-Pisces
Minimum Versions: Atlas 5.34.0.R

The Ic / Vce characteristics of an Insulated Gate Bipolar Transistor (IGBT) are simulated. This example shows:

• Creating the IGBT structure using Atlas
  
• Ic / Vce test definition
  
• IGBT Ic versus Vce characteristics

The Atlas simulation begins with the definition of the IGBT structure. Atlas is used to define the IGBT structure including mesh, materials, electrodes, and doping. A fine rectangular mesh is first defined. Next the materials are assigned to specific regions using the region command. The electrodes and doping profiles are then defined. Additionally, specific characteristics of these materials, their electrodes and the charge carriers within can be modified. The material statement is used to define the electron and hole recombination lifetimes in the semiconductor. The contact statement defines the workfunction of the polysilicon electrode, in this case, that of degenerately doped n-type polysilicon. This completes the IGBT structure definition.

For any Atlas device simulation, the physical transport models must be enabled using the model statement. In this case, they reflect the different physical effects important to the IGBT device. They are analytic: analytic concentration dependent mobility, fldmob: lateral electric field dependent mobility, surfmob: surface mobility degradation, srh: Shockley-Read-Hall recombination, and auger: recombination accounting for high level injection effects.

IGBT output characteristics are simulated by sweeping the collector contact voltage for several discrete values of gate voltage. In this example, the collector voltage will be swept from 0 to 20 V for gate voltages of 5 and 10 V. This is accomplished by first obtaining a solution at each gate bias of interest with all other electrodes set to 0V. Next, each gate solution is used as the initial solution for a collector sweep. Output log files are saved for each gate-collector sweep combination. TonyPlot displays the IGBT Ic / Vce family of curves by overlaying all output curves on one plot.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.