• TCAD Examples

    TCAD Examples

powerex25.in : Silicon Carbide (SiC) Hybrid Junction Termination Extension (HJTE)

Requires: Victory Process, Victory Mesh, Victory Device/Atlas
Minimum Versions: Victory Process 7.76.1.R, Victory Mesh 1.9.0.R, Victory Device 1.20.0.R or Atlas 5.34.0.R

This example demonstrates a novel edge termination technique for SiC devices known as Hybrid Junction Termination Extension (HJTE).
The input deck provided with this example can be run by either Victory Device or Atlas simulator, by changing the solver name in the command go victorydevice into go atlas. It shows that both device simulator frameworks can be fully compatible in terms of input commands, producing comparable results, and allowing easy transition between Atlas and Victory Device.

The example is inspired from the following publication (with experimental data): A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension, Woongje Sung, Member, IEEE, and B. J. Baliga, Life Fellow, IEEE.
Hybrid JTE combines MFZ and RA JTE structures in a single edge termination device allowing near ideal breakdown voltage over a wide range of JTE doses. The device presented in this example shows breakdown at 5100V.
You can view internal physical variables inside the devices, such as electric field, impact generation rates, current density distribution, etc. in Tonyplot. The structure files showing doping profiles, breakdown voltage, etc. are saved and can be visualized in Tonyplot.

The example shows:
1.Process simulation of the SiC edge termination device that includes: a. Layout to drive the Guard rings – spacing and doping profiles are as per the publication. b. Process simulation of complete SiC edge termination structure using Victory Process 2.Remeshing the structure using Delaunay remesh strategy in Victory Mesh. 3.Simulation of Breakdown voltage using Victory Device

Since the device is made using WBG material (SiC), the simulation is run using 128-bit precision (recommended), by setting the option:
go victorydevice simflags="-128"

To optimize simulation runtime, the implant profiles are first created in 1D simulation mode using Monte Carlo implantation model. These 1D profiles are later imported in the main 2D structure. The implantation can be toggled between importing 2D profile and using MC implant in 2D structure directly by uncommenting “implant” statements in the process deck and commenting out the “profile” statement.

To load and run this example, select the Load button in Deckbuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in Deckbuild to execute the example.

Input Files
Output Results
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software.
Copyright © 1984 - Silvaco, Inc. All Rights Reserved. | Privacy Policy