• TCAD Examples

    TCAD Examples

powerex21.in : 3D Mixed-Mode Simulation of Current Filaments in Multicell IGBT

Requires: VictoryProcess3D / VictoryDevice3D
Minimum Versions: Victory Process 7.76.1.R, Victory Mesh 1.9.0.R, Victory Device 1.20.0.R

When an IGBT is turned on in the presence of a short-circuit in an output circuit for a period of time, it can dissipate power in the form of heat to such an extent that current filaments evolve in a localized area within the IGBT device. The heating effects of current filaments are destructive and thus should not be allowed to arise during a short-circuit operation of an IGBT.

In this example, the 3D mixed-mode short-circuit simulation is performed on an IGBT composed of 8 cells to demonstrate the occurrence of current filaments in multicell IGBT.

The 8-cell IGBT structure is constructed in cell mode of Victory Process by joining 8 duplicates of the IGBT single cell together using the parameter mirror on the export statement. Each IGBT single cell has a width of 1um and features a 1.3 kV trench-gate design with a field-stop layer (n-buffer).

Short-circuit testing is conducted with a test circuit consisting of a vc 650V DC power supply in series with a 10-mohm resistor rs and a 10-nH inductor ls . A vg gate pulse generator in series with a 10-ohm resistor rg generates a 15V pulse in 10 ns with a pulse length of 10 us.

It is assumed that the bottom collector electrode of the IGBT is maintained at an ambient temperature of 300 K via a thermal contact with a thermal resistance of 0.3 cm2.K/W ( thermcontact name=collector ext.temp=300 alpha=1/0.3 ).

As the mixed-mode simulation starts from an initial DC voltage supply of 650V, a Victory Device solution powerex21_1.str for the IGBT device adevice at a collector-to-emitter voltage of 650V is first obtained from the stand-alone Victory Device simulation and then loaded into the mixed-mode part of the input deck with .options loadsolutions for use as an initial guess.

Victory Device utilizes a set of physical models for the non-isothermal ( lat.temp self-heating) simulation including klassen low-field doping-dependent mobility , fldmob lateral electric field-dependent mobility, srh Shockley-Read-Hall recombination, hnsaug temperature and concentration dependence Auger recombination, and selb impact ionization. The pas MPI-based parallel direct solver specified in the Victory Device part of the mixed-mode input deck ( method device=adevice pas ) proves to greatly enhance Victor Device performance in terms of speed and robustness.

The simulation results give the short-circuit waveforms up to destruction of the IGBT at time t=7.57 us as evidenced by a sharp rising of temperature in conjunction with the establishment of current filaments. A 3D electron current density distribution at that device destruction time is captured and saved for visualization in TonyPlot with .save tsave="7.57us".

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

Input Files
Output Results
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software.
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