powerex19.in : Super-Junction "RESURF" LDMOS
Requires Victory Process - Victory Device
Minimum Versions: Victory Process 7.76.1.R, Victory Mesh 1.9.0.R, Victory Device 1.20.0.R
By default Victory Process and Device run on just one processor. To ensure better perfomance on your computer the following simulation condition simflags="-P all" could be specified in the go statement starting Victory Process or Device. This means that all processors available will be used. If you want to use a smaller number of processors you can substitute "all" with a desired number, e.g. simflags="-P 4".
This simulation is similar to the previous Buffered Superjunction LDMOS but uses a low doped substrate and longer superjunctions to increase the off state breakdown voltage to approximately 500 volts.
The structure is modelled after the one proposed by Ming Qiao et al. in the "Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's", May 23-26, 2011 SanDiego, CA, entitled: "A Noval Substrate- Assisted RESURF Technology for Small Curvature Radius Junction".
This simulation models the active region unit cell of the above device. By careful optimization of the superjunction widths and lengths together with the doping concentrations of these super-junctions and the related N-Well, a 500 volt breakdown device is realized when coupled with a high resistivity substrate.
The 3D device is then passed to Victory Device to simulate the breakdown voltage and threshold voltage curves (IdVg)
To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.
Input Deck
# (c) Silvaco Inc., 2022
go victoryprocess
Init material=silicon c.boron=1e14 \
layout="powerex19.lay" depth=90 gasheight=5
Option cartesian.spacing.ratio=1.35
Cartesian mask="GATE" spacing=0.5 all.point
Cartesian mask="METAL" spacing=0.75 all.point
Line x location=37
Line x location=38
Line x location=56.5
Line x location=57.5
Line x location=58.5
Line x location=59.5
Line x location=60.5
Line x location=61.5
Line x location=62.5
Line x location=63.5
Line y location=0
Line y location=0.2
Line y location=0.45
Line y location=0.55
Line y location=1.45
Line y location=1.55
Line y location=1.8
Line y location=2
Line z location=-5
Line z location=-1.5
Line z location=-1.1
Line z location=-0.5
Line z location=-0.1
Line z location=0
Line z location=0.025
Line z location=3
Line z location=3.5
Line z location=80
Line z location=90
Deposit material=oxide MAX thickness=0.1
Mask "N_WELL" reverse
Implant phosphorus energy=2000 tilt=0 rotation=0 dose=8e11
Strip material=resist
Mask "P_WELL" reverse
Implant boron energy=1500 tilt=0 rotation=0 dose=1e13
Implant boron energy=500 tilt=0 rotation=0 dose=5e12
Implant boron energy=100 tilt=0 rotation=0 dose=2e12
Implant boron energy=40 tilt=0 rotation=0 dose=1e12
Strip material=resist
Mask "N_PLUS" reverse
Implant phosphorus energy=150 tilt=0 rotation=0 dose=2e15
Strip material=resist
Mask "P_PLUS" reverse
Implant boron energy=400 tilt=0 rotation=0 dose=5e15
Implant boron energy=100 tilt=0 rotation=0 dose=2e15
Implant boron energy=40 tilt=0 rotation=0 dose=1e15
Strip material=resist
Mask "N_FING" reverse
Implant phosphorus energy=300 tilt=0 rotation=0 dose=1.5e12
Strip material=resist
Mask "P_FING" reverse
Implant boron energy=120 tilt=0 rotation=0 dose=1.5e12
Strip material=resist
Diffuse time=1 temperature=1050
Deposit material=nitride MAX thickness=0.4
Etch material=nitride MAX mask="LOCOS"
Deposit material=polysilicon CONFORMAL thickness=1
Etch material=polysilicon MAX mask="GATE"
Electrodes "GATE" material=polysilicon
Deposit material=bpsg MIN thickness=0.4
Etch material=bpsg MAX mask="METAL" reverse
Etch material=oxide MAX mask="METAL" reverse
Deposit material=aluminum MIN thickness=0.5
Electrodes "METAL" material=aluminum
save name=powerex19_vp_0
# Device meshing
# ==============
go victorymesh
load in=powerex19_vp_0
remesh regular
save out=powerex19_0.str
tonyplot3d powerex19_0.str -set powerex19_0.set
# Device simulation
# =================
go victorydevice
mesh infile=powerex19_0.str verbose=2
contact name=gate n.poly
models consrh cvt
impact selb
method climit=1e-4 pam.gmres ix.tol=1e-35 ir.tol=1e-35 norm.scaling.local
solve init
solve previous
log outfile=powerex19_0.log
solve vdrain=0.01 previous
solve vdrain=0.05 vstep=0.05 vfinal=0.5 name=drain
solve vstep=0.5 vfinal=5 name=drain
solve vstep=1 vfinal=10 name=drain
solve vstep=5 vfinal=50 name=drain
solve vstep=10 vfinal=100 name=drain
solve vstep=20 vfinal=200 name=drain
solve vstep=20 vfinal=500 name=drain
solve vstep=10 vfinal=1000 name=drain cname=drain compliance=1e-8
contact name=drain current
solve previous
solve istep=1.05 ifinal=1e-8 imult name=drain
save outf=powerex19_1.str
tonyplot powerex19_0.log -set powerex19_1.set
go victorydevice
mesh infile=powerex19_0.str verbose=2
contact name=gate n.poly
models consrh cvt
method pam.gmres norm.scaling.local
solve init
solve previous
solve vdrain=0.001 previous
solve vdrain=0.01 previous
solve vdrain=0.1 previous
log outfile=powerex19_1.log
solve vgate=0.001 previous
solve vgate=0.01 previous
solve vgate=0.1 previous
solve vgate=0.2 previous
solve vstep=0.2 vfinal=5 name=gate
tonyplot powerex19_1.log
