powerex17.in : Wide Bandgap Ga2O3 MOSFET
Requires: ATLAS
Minimum Versions: ATLAS 5.26.1.R
Single-crystal gallium oxide (Ga2O3) has attracted increasing attention as a promising material for power device applications. It possesses excellent material properties and has the potential for mass productivity of low-cost and high-quality bulk crystals by using methods such as the edge-defined film-fed growth (EFG) method [1].
The objective of this example is to demonstrate how to simulate this new wide bandgap oxide semiconductor material Ga2O3 and to reveal what kinds of physical models and settings are needed in order to reproduce experimental I-V data. The experimental data used in this benchmark were selected from a recently reported paper on the first demonstration of Ga2O3 MOSFET [2].
The substrate is a semi-insulating single-crystal β-Ga2O3 and a 300 [nm] thick n-type Ga2O3 channel layer was grown on it. The dopant concentration of the layer is 7e17 [1/cm3] and about half of this is considered to be activated. The source and drain contact regions were formed by multiple Si implantations with 150 [nm] deep box profile whose concentration is 5e19 [1/cm3]. We assumed that 3e19 [1/cm3] were activated. The distance between the source and the drain box regions is 20 [um] and a 20 [nm] thick Al2O3 gate dielectric film was formed with a 2 [um] long Ti/Pt/Au metal gate on top.
We selected simple device models as much as possible. Only the LAT.TEMP parameter was set on the MODEL statement to solve the heat flow in the device and a constant thermal conductivity model was used.
Simulated ID-VD curves and a ID-VG curve are shown in Fig.2 and Fig.3 with corresponding experimental data. Fairly good agreements with experimental data were obtained using constant mobility model even without any defect trap and interface charge
To load and run this example, select the Load button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.
References:
1]. H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa and Y. Yaguchi, "Growth of B-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method " Jpn. J. Appl. Phys. 47, 8506(2008).
[2]. M.Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui and S. Yamakoshi, "Depletion-mode Ga2O3 MOSFETs " 71st Annual Device Research Conference (DRC), 10.1109/DRC.2013.6633890.
Input Deck
# (c) Silvaco Inc., 2022
go atlas
#
mesh width=1e3
#
x.m l=-2.0 s=0.4
x.m l=0.0 s=0.4
x.m l=9.0 s=0.1
x.m l=11.0 s=0.1
x.m l=20.0 s=0.4
x.m l=22.0 s=0.4
#
y.m l=-0.02 s=0.01
y.m l=0 s=0.01
y.m l=0.3 s=0.01
y.m l=0.5 s=0.05
#
region num=1 material=Al2O3 y.max=0.0
region num=2 user.material=Ga2O3 y.min=0.0 y.max=0.3
region num=3 user.material=Ga2O3 y.min=0.3
#
elec num=1 name=source x.min=-2.0 x.max=0.0 y.min=0.0 y.max=0.0
elec num=2 name=gate x.min=9.0 x.max=11.0 y.min=-0.02 y.max=-0.02
elec num=3 name=drain x.min=20.0 x.max=22.0 y.min=0.0 y.max=0.0
#
doping region=2 uniform n.type conc=1.1e17
doping region=2 gauss x.max=0.0 y.min=0.0 y.max=0.15 conc=3.0e19 n.type char=0.01 ratio.lat=1.0
doping region=2 gauss x.min=20.0 y.min=0.0 y.max=0.15 conc=3.0e19 n.type char=0.01 ratio.lat=1.0
doping region=3 uniform n.type conc=1.5e16
#
material material=Ga2O3 user.default=GaN user.group=semiconductor \
affinity=4.0 eg300=4.8 nc300=3.72e18 nv300=3.72e18 permittivity=10.0 \
mun=118 mup=50 tcon.const tc.const=0.13
material material=Al2O3 tcon.const tc.const=0.33
material region=3 mun=20
mobility tmun=2.0
models lat.temp print
#
thermcon num=1 x.min=-2.0 x.max=22.0 y.min=0.5 y.max=0.5 alpha=200 ext.temp=300
thermcon num=2 elec=1 ext.temp=300
thermcon num=3 elec=3 ext.temp=300
contact num=2 workf=5.23
#
method climit=1.0e-4 maxtrap=10
#
output con.band val.band flowline
solve init
solve prev outf=vg+0.ini
save outf=powerex17_0.str
solve vgate=0.1
solve vgate=0.5
solve vstep=0.25 vfinal=1.5 name=gate
solve vstep=0.5 vfinal=4.0 name=gate
solve prev
solve vdrain=0.001
solve vdrain=0.01
solve vdrain=0.1
solve vdrain=1.0
solve vdrain=2.0 vstep=1.0 vfinal=25.0 name=drain
log outfile=powerex17_0.log
solve vgate=4.0 vstep=-0.5 vfinal=-15.0 name=gate
solve vstep=-2.5 vfinal=-25.0 name=gate
log off
#
load infile=vg+0.ini
solve prev
solve vgate=0.0 vstep=0.4 vfinal=4.0 name=gate outf=vg+4.ini onefile
#
load infile=vg+0.ini
solve vgate=0.0 vstep=-0.5 vfinal=-4.0 name=gate outf=vg-4.ini onefile
solve vstep=-0.5 vfinal=-8.0 name=gate outf=vg-8.ini onefile
#
load infile=vg+4.ini
log outf=powerex17_1.log
solve prev
solve vdrain=0.001
solve vdrain=0.01
solve vdrain=0.1
solve vdrain=0.2
solve name=drain vdrain=1.0 vfinal=40.0 vstep=1.0
log off
save outf=vg+4d.sol
#
load infile=vg+0.ini
log outf=powerex17_2.log
solve prev
solve vdrain=0.001
solve vdrain=0.01
solve vdrain=0.1
solve vdrain=0.5
solve name=drain vdrain=1.0 vfinal=40.0 vstep=1.0
log off
save outf=vg+0d.sol
#
load infile=vg-4.ini
log outf=powerex17_3.log
solve prev
solve vdrain=0.001
solve vdrain=0.01
solve vdrain=0.1
solve vdrain=0.5
solve name=drain vdrain=1.0 vfinal=40.0 vstep=1.0
log off
save outf=vg-4d.sol
#
load infile=vg-8.ini
log outf=powerex17_4.log
solve prev
solve vdrain=0.001
solve vdrain=0.01
solve vdrain=0.1
solve vdrain=0.5
solve name=drain vdrain=1.0 vfinal=40.0 vstep=1.0
log off
save outf=vg-8d.sol
tonyplot powerex17_0.str powerex17_0.str -set powerex17_0.set
tonyplot -overlay powerex17_1.log powerex17_2.log powerex17_3.log powerex17_4.log powerex17_1.dat powerex17_2.dat powerex17_3.dat powerex17_4.dat -set powerex17_1.set
tonyplot -overlay powerex17_0.log powerex17_0.dat
