Recessed N-Type MESFET : Recessed N-Type MESFET

Requires: Mercury
Minimum Versions: Atlas 5.28.1.R

The Mercury module is optimized for simulating epitaxial FETs. That is FETs where the material and doping are constant along the x-dimension of the device (from the source to the drain). The only variation allowed in the x-direction is the position of the gate and the position/depth of a recess on the surface.

This example defines a simple, recessed n-type MESFET and simulates the DC-IV curves and the small-signal AC characteristics.

This example introduces the surface command that is used to define the recess.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.