MOS2 : Advanced MOS Application Examples
- mos2ex01.in : Circuit Analysis of NMOS Inverters
- mos2ex02.in : Hot Electron Reliability
- mos2ex03.in : Gate Turn-on Transient
- mos2ex04.in : 3D Width Effect Simulation
- mos2ex05.in : Comparison of Id/Vds using EB and NEB models
- mos2ex06.in : BSIM3 SPICE Model Extraction (Salicide process)
- mos2ex07.in : NMOS Snapback
- mos2ex08.in : NMOS Second Breakdown Simulation
- mos2ex09.in : Drain/Gate Overlap Capacitance
- mos2ex10.in : 2D NMOS simulation from 1D Athena Doping
- mos2ex11.in : Breakdown Voltage using Ionization Integrals
- mos2ex12.in : SiGe PMOS Process and Device Simulation
- mos2ex13.in : SiGe PMOS Id/Vds with NEB Model
- mos2ex14.in : Comparison of CVT, SHIRAHATA and WATT Mobility Models
- mos2ex15.in : Effect of Poly Depletion on C-V curves
- mos2ex16.in : Effect of Poly Doping on Threshold Voltage
- mos2ex17.in : 20nm n-MOSFET created using 60nm lthography
- mos2ex18.in : Negative Bias Temperature Instability of a Silicon pMOSFET
- mos2ex19.in : Threshold Voltage Hysteresis of a Silicon nMOSFET
- mos2ex20.in : Reaction-Diffusion degradation modelling of a Silicon pMOSFET
- mos2ex21.in : 3D FinFET Simulation
- mos2ex22.in : Creating a Paper Spice Model Card from nMOS TCAD simulations
- mos2ex23.in : Device Degradation due to Hole Trapping in a Silicon pMOSFET
- mos2ex24.in : Edge Field Emitting Vacuum Triode
- mos2ex25.in : Point Field Emitting Vacuum Triode
- mos2ex26.in : 7nm pFinFET With SiGe Source-Drain Stressors
- mos2ex27.in : 3D Cylindrical Nanowire
- mos2ex28.in : Growing SiGe Source-Drain Stressors using Direction Dependent Epitaxy
Additional Info:
These examples are for reference only. Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation
you should consider updating to a later version of the software.