25-nm p-MOSFFET

mcdeviceex04.in : 25-nm p-MOSFFET

Requires: MC Device
Minimum Versions: Atlas 5.28.1.R

This example demonstrates 2D Monte Carlo device modeling of a silicon p-MOSFET without quantum correction.

For all aspects of this example apart from the quantum correction, please see mcdeviceex02.

This example was generated by changing all n-type dopants to p-type dopants, all p-type dopants to n-type dopants, and by negating all applied bias voltages.

The CARRIER parameter on the ALGO statement is changed from CARRIER = E for electrons (as in mcdeviceex02) to CARRIER = H for holes. This means that holes are modeled using the Monte Carlo transport model and electrons are modeled using the constant quasi-Fermi method. In mcdeviceex02, these choices are reversed.

In additional, the PHON , BANDS , and FINAL statements are added near the end of the input file (just before the SOLVE statement). These three statements are provided here to change to settings consistent with CARRIER = H. The default values for these three statements are are consistent with CARRIER = E.

In this case, the x-component of the currents produced by the p-MOSFET are negative while the x-component of the current produced by the n-MOSFET were positive. This is as expected and follows the sign conventions for the current described in the "Current Regions" section of the MCDEVICE chapter of the Atlas User's Manual.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.