AlGaN/GaN Electro-Thermal simulation : AlGaN/GaN Electro-Thermal simulation

Requires: Victory Device
Minimum Versions: Victory Device 1.14.1.R

This example demonstrates Id-Vds and Id-Vgs simulations for a 2D and 3D AlGaN/GaN HEMT.

This example demonstrates:

  • Construction of the heterojunction structure using Victory Device syntax
  • Material and models parameter specification
  • Simulation of Id/Vds and Id/Vgs characteristics
  • Display of the results in TonyPlot and TonyPlot 3D

By default Victory Device run on just one processor. To ensure better perfomance on your computer the following simulation condition simflags="-P all" could be specidied in the go line starting Victory Device. This means that all processors available will be used. If you want to use a smaller number of processors you can substitute "all" with a desired number, e.g. simflags="-P 4".

The device under consideration is a AlGaN/GaN HEMT. The main concept here is that the polarization charge is calculated using the built-in models as specified by the POLARIZATION parameter on the MODEL statement.

After the initial solution is obtained, the gate voltage is ramped from 0V to -7.6 V to get the IdVg characteristic at Vd=1 V.

A family of drain current characteristics are then simulated with lattice heating taken into account by ramping the drain from 0 to 15 V at various gate voltages.

Since the width of the 3D device is set to 1um a direct comparison with 2D results is possible for validation purpose.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.