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simstd_nov_2000_a1.pdfPublication Date:
Nov 01, 2000Size:
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The low temperature operation of many device structures has been shown as an effective method for improving device performance without reducing device size. By modeling low temperature phenomena, numerical simulation of device operation at low temperatures provides an effective means for analyzing such performance improvements before investing manufacturing time or money. It is the purpose of this paper to discuss the modeling of the dopant freeze-out phenomenon in ATLAS and provide an application example of its use.Registration
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