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simstd_feb_2003_a4.pdf

Publication Date:

Feb 04, 2003

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19.84 KB

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Computer simulation is used extensively to verify physical phenomena in semiconductor devices. Meshing plays an essential role in obtaining good simulation results. If care is not properly taken, serious errors may occur in the results. The objective of this article is to identify errors in the simulation of the strained-Si heterostructure MOSFET device using ATLAS, Silvaco’s two-dimensional numerical simulator.


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