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simstd_aug_2003_a3.pdfPublication Date:
Aug 03, 2003Size:
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An effective device structure for reducing leakage current in BH laser diodes with semiin-sulation doped Fe in InP blocking layers has been analyzed [3]. In this study, the leakage current and light output power as a function of the leakage current path is examined. The blocking region used follows p-n-p-n structure.Registration
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