Download File Details
File name:
simstd_Q4_2013_a2.pdfPublication Date:
Oct 01, 2013Size:
8.29 MBDescription:
Single-crystal gallium oxide (Ga2O3) has attracted increasing attention as a promising material for power device applications. It possesses excellent material properties and has the potential for mass productivity of low-cost and high-quality bulk crystals by using methods such as the edge-defined film-fed growth (EFG) method (1).Registration
Content goes here of popup