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simstd_Q4_2012_a3.pdfPublication Date:
Oct 01, 2012Size:
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Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices <111> is oxidized approximately 1.7 times faster then the <100> plane (1)(2). During an oxidation process the geometry of a 3D structure may change significantly and the silicon/oxide interface may pass through various crystal planes with different oxidation rates.Registration
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