Download File Details
File name:
simstd_Q3_2020_a3.pdfPublication Date:
Oct 01, 2020Size:
1.38 MBDescription:
The qualification of GaN power high-electron-mobilitytransistors (HEMTs) must consider the device ruggedness against out-of-SOA (safe operating area) events [1- 3].Registration
Content goes here of popup

