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simstd_Q2_2018_a3.pdfPublication Date:
Apr 01, 2018Size:
1.27 MBDescription:
Gallium Nitride High Electron Mobility (GaN HEMT) device technology has gained a lot of traction during the last years. These devices have significant advantages compared to Silicon in user applications such as high frequency/high power amplifiers, radar systems, power conversion and applications where stability over a wide range of temperatures is required, such as automotive-related.Registration
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