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simstd_Q2_2014_a2.pdfPublication Date:
Apr 01, 2014Size:
8.29 MBDescription:
Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been realized (1-3), however, those devices have some problems for its reliability and control of the IV characteristics. The problems are related to defects in the bulk and at the interface of insulator/semiconductor.Registration
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