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simstd_Q1_2011_a3.pdfPublication Date:
Jan 01, 2011Size:
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Developing ULSI silicon technology requires good control of dopant diffusion and minimizing defect formation during thermal oxidation. The use of high pressures of ambient gases can have a significant impact on ability to meet such requirements (1). In particular, high pressure steam (~10atm) allows the growth of oxide films of the order of 1 ?m in less then 2.5 hours at temperature as low as 800 C. At such low temperatures dopant redistribution is substantially reduced.Registration
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