• Single & Dual Port SRAM Compilers

Single and Dual Port SRAM Compilers

Compilers Overview

Silvaco has 25 years’ experience in compiled memory design. Its technology is silicon proven in thousands of designs and millions of wafers.

  • Compilers for SRAM (single and dual Port), Register File (1 port and 2 port), and ROM
  • Deployed at 12 different foundries and IDM’s
  • Available in processes down to 22nm

SRAM Compiler Features

  • Optimized for low power, general purpose and high performance applications
  • Effective power management with multiple power modes and options
  • High Performance through Multiple voltage threshold (Vt) options and operating modes
  • High Yield
    • Verified for global and local variation tolerant design
    • ECC bits, word size and address flexibility for redundancy
  • Available technologies include 180nm, 152nm, 130nm, 110nm, 90nm, 85nm, 65nm, 55nm, 40nm, 28nm and 22nm
  • CMOS processes variants covered include G, LP, SOI, and SRAMs in CMOS in the High Voltage, BCD, and eFlash foundry offerings
  • Can easily port to other nodes and processes

SRAM Architecture

  • Designed primarily for low power operation
  • High density option provides industry leading area and density
  • Multiple low power modes for 55nm, 40nm and below include Nap, Retention, Nap+Retention modes
  • Embedded switches support
  • Available in
    • Single supply
    • Dual supply rail for periphery and core
  • Configurable write mask option
  • Optional support for Built in Self Test and Repair (BIST/R)
FeatureBenefit
High densityIndustry leading area
Partitioned arrayExtended battery life
Several operating modesUp to 50% lower power consumption
Data retention modeReduce leakage current
BIST (optional)Increase reliability and yield

SRAM Low Power Operation Modes

Silvaco SRAM compilers offer a range of low power operation modes with different leakage and wake-up times.

ModeDescriptionLeakage*
Active

Core: On @ Vdd
Periphery: On @ Vdd

·       Read or write

·       Core and Periphery powered and operational.

·       Dynamic power and small Leakage power consumption

—
Standby

Core: On @ Vdd
Periphery: On @ Vdd

·       No read or write.

·       Core and Periphery powered but not operational

·       Small Leakage power but no Dynamic power consumption

·       Quick Wake Up time

1.00 x
Nap*

Core: On @ Vdd
Periphery: OFF

·       Source Biasing turned on

·       Intermediate low power state

·       Low leakage power consumption

·       Quick Wake Up time (1 clock cycle), but a bit slower than Standby Wake Up time

0.69 x
Retention*

Core: On @ < Vdd Periphery: OFF

·       Periphery power turned off

·       Core at minimum voltage to retain data

·       Lower Leakage power consumption than Nap

·       Slow Wake Up time depends on powering up periphery switches and other circuits

0.54 x
Retention + Nap*

Core: On @ Vdd
Periphery: OFF

·       Source Biasing turned on

·       Core maintained at nominal voltage

·       Lower Leakage power consumption than Retention

·       Slow Wake up time depends on powering up periphery switches and other circuits

0.28 x
Shutdown (Data Content Lost)

Core: OFF
Periphery: OFF

·       Core and Periphery switched off

·       Lowest Leakage power consumption

·       Slowest Wake Up time

—

*Advanced power modes are available for 55nm, 40nm, and below nodes.

Memory Configurations

Silvaco SRAM compilers support different voltage supply configurations.  The compilers also support a wide range of mux and word width configurations.


Silvaco SRAM compilers also support embedded switches for finer integrated control of low power operation.